Add to ORKGResults are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.Master of Engineerin
This thesis presents results of a study focused on the growth processes of tungsten nitride silicide...
The focus of this thesis is the fabrication and characterisation of ultra-thin self-forming Cu diffu...
Due to the dramatic price increase of precious metals, the replacement of Au with Cu in wire bonding...
Results are presented on the stress studies in various diffusion barriers used in Al and Cu metalliz...
As a main part of thermal stability studies , the atomic intermixing, new compound formation and pha...
Several concurrent subprojects have been undertaken under the main project ?Fabrication and Characte...
The technological trend of shrinking integrated circuits in order to increase the logic density and ...
Copper in silicon is known to have detrimental effects on silicon devices. Therefore, understanding ...
In modern integrated circuits with Cu interconnects a diffusion barrier is used between the dielectr...
textCopper diffusion barriers are necessary to contain copper within microelectronics interconnect ...
Aluminum is the current metal of choice for metallization in the IC industry. However, serious elect...
The trend to replace Au and Al wires with Cu in wire bonding has become an emerging trend for IC pac...
Currently, the material of choice for interconnects on silicon devices is aluminum. This is because ...
Over the last several years, interconnections used in the semiconductor industry have advanced as fe...
The utilization of copper as an interconnect material requires application of barrier films in order...
This thesis presents results of a study focused on the growth processes of tungsten nitride silicide...
The focus of this thesis is the fabrication and characterisation of ultra-thin self-forming Cu diffu...
Due to the dramatic price increase of precious metals, the replacement of Au with Cu in wire bonding...
Results are presented on the stress studies in various diffusion barriers used in Al and Cu metalliz...
As a main part of thermal stability studies , the atomic intermixing, new compound formation and pha...
Several concurrent subprojects have been undertaken under the main project ?Fabrication and Characte...
The technological trend of shrinking integrated circuits in order to increase the logic density and ...
Copper in silicon is known to have detrimental effects on silicon devices. Therefore, understanding ...
In modern integrated circuits with Cu interconnects a diffusion barrier is used between the dielectr...
textCopper diffusion barriers are necessary to contain copper within microelectronics interconnect ...
Aluminum is the current metal of choice for metallization in the IC industry. However, serious elect...
The trend to replace Au and Al wires with Cu in wire bonding has become an emerging trend for IC pac...
Currently, the material of choice for interconnects on silicon devices is aluminum. This is because ...
Over the last several years, interconnections used in the semiconductor industry have advanced as fe...
The utilization of copper as an interconnect material requires application of barrier films in order...
This thesis presents results of a study focused on the growth processes of tungsten nitride silicide...
The focus of this thesis is the fabrication and characterisation of ultra-thin self-forming Cu diffu...
Due to the dramatic price increase of precious metals, the replacement of Au with Cu in wire bonding...