Transition metal dichalcogenides (TMDs) possess intrinsic spin–orbit interaction (SOI) with high potential to be exploited for various quantum phenomena. SOI allows the manipulation of spin degree of freedom by controlling the carrier's orbital motion via mechanical strain. Here, strain modulated spin dynamics in bilayer MoS2 field-effect transistors (FETs) fabricated on crested substrates are demonstrated. Weak antilocalization (WAL) is observed at moderate carrier concentrations, indicating additional spin relaxation path caused by strain fields arising from substrate crests. The spin lifetime is found to be inversely proportional to the momentum relaxation time, which follows the Dyakonov–Perel spin relaxation mechanism. Moreover, the sp...
Van der Waals heterostructures have become a paradigm for designing new materials and devices in whi...
Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune thei...
We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and...
In the last few years, the effect of strain on the optical and electronic properties of MoS2 layers ...
Spins confined to atomically thin semiconductors are being actively explored as quantum information ...
Abstract Lateral heterostructures of two-dimensional (2D) materials, integrating different phases o...
We study the strain tuning of magnetism in Mn doped MoS2 monolayer system. With the increase of the ...
First-principles calculations and extensive analyses reveal that the H phase of two-dimensional (2D)...
Proximity effects between layered materials trigger a plethora of novel and exotic quantum transport...
Transition-metal dichalcogenides are unique semiconductors because of their exclusive coupling betwe...
Since their discovery, single-layer semiconducting transition metal dichalcogenides have attracted m...
When considering transition-metal dichalcogenides (TMDCs) in van der Waals heterostructures for peri...
The ability to control nanoscale electronic properties by introducing macroscopic strain is of criti...
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the e...
The miniaturization of transistors and the high density of integrated circuits makes conventional tr...
Van der Waals heterostructures have become a paradigm for designing new materials and devices in whi...
Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune thei...
We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and...
In the last few years, the effect of strain on the optical and electronic properties of MoS2 layers ...
Spins confined to atomically thin semiconductors are being actively explored as quantum information ...
Abstract Lateral heterostructures of two-dimensional (2D) materials, integrating different phases o...
We study the strain tuning of magnetism in Mn doped MoS2 monolayer system. With the increase of the ...
First-principles calculations and extensive analyses reveal that the H phase of two-dimensional (2D)...
Proximity effects between layered materials trigger a plethora of novel and exotic quantum transport...
Transition-metal dichalcogenides are unique semiconductors because of their exclusive coupling betwe...
Since their discovery, single-layer semiconducting transition metal dichalcogenides have attracted m...
When considering transition-metal dichalcogenides (TMDCs) in van der Waals heterostructures for peri...
The ability to control nanoscale electronic properties by introducing macroscopic strain is of criti...
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the e...
The miniaturization of transistors and the high density of integrated circuits makes conventional tr...
Van der Waals heterostructures have become a paradigm for designing new materials and devices in whi...
Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune thei...
We investigate the proximity-induced spin-orbit coupling in heterostructures of twisted graphene and...