A dc solid-state power controller (SSPC) is a semiconductor-based circuit breaker used for fault isolation in aerospace applications. Device selection is important to ensure the reliability and performance of the SSPC. In this paper, Si, SiC, and GaN field-effect transistors are compared under steady-state and transient conditions. Experimental results are presented to evaluate the performance and characteristics.Nanyang Technological UniversityNational Research Foundation (NRF)Accepted versionThis work is jointly funded by the National Research Foundation (NRF) of Singapore, Rolls-Royce Singapore Pte. Ltd, and Nanyang Technological University, Singapore
In application areas such as data centers, electric ships and dc microgrids, dc systems are better s...
International audienceThis paper evaluates robustness and performances of two types of 1.2 kV SiC MO...
SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In or...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET agains...
Advancements in the field of electrical and electronic aircraft technologies have introduced a conce...
The latest generation of fighter aircraft utilizes a 270Vdc power system [1]. Such high voltage DC p...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Vol...
Present day applications using power electronic converters are focusing towards improving the speed,...
This paper provides the first comprehensive study on the forward and reverse conduction and reliabil...
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon...
High power silicon carbide (SiC) semiconductor devices are now commercially available on a fast grow...
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switc...
Increased electrification of traditionally hydraulic and pneumatic functions on aircrafts has put po...
In application areas such as data centers, electric ships and dc microgrids, dc systems are better s...
International audienceThis paper evaluates robustness and performances of two types of 1.2 kV SiC MO...
SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In or...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
This paper presents an experimental switching behaviour comparison of GaN HEMT and SiC MOSFET agains...
Advancements in the field of electrical and electronic aircraft technologies have introduced a conce...
The latest generation of fighter aircraft utilizes a 270Vdc power system [1]. Such high voltage DC p...
International audienceSilicon (Si) power devices have dominated theworld of Power Electronics in the...
The conduction and switching losses of SiC and GaN power transistors are compared in this paper. Vol...
Present day applications using power electronic converters are focusing towards improving the speed,...
This paper provides the first comprehensive study on the forward and reverse conduction and reliabil...
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon...
High power silicon carbide (SiC) semiconductor devices are now commercially available on a fast grow...
SiC and GaN power transistors switching energy are compared in this paper. In order to compare switc...
Increased electrification of traditionally hydraulic and pneumatic functions on aircrafts has put po...
In application areas such as data centers, electric ships and dc microgrids, dc systems are better s...
International audienceThis paper evaluates robustness and performances of two types of 1.2 kV SiC MO...
SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In or...