This research focuses on the stress-induced voiding in Cu interconnects. The different types, and the process and geometrical dependency of stress-induced voiding are studied. In addition, in-depth understanding of stress-induced voiding mechanisms and process; approaches to improve stress migration reliability and, the extendibility and impacts of the approaches to future technologies, are discussed.DOCTOR OF PHILOSOPHY (EEE
International audienceCopper-copper direct bonding is a fundamental procedure in three-dimensional i...
170 p.With changing materials systems and interconnect architectures from Al based metallization to ...
Failures introduced by the electromigration (EM) effect in copper interconnect is one of the top rel...
This research focuses on the stress-induced voiding in Cu interconnects. The different types, and th...
Several studies have illustrated that the assumption of robust SM performance of Cu is optimistic be...
[[abstract]]In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with ...
[[abstract]]In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with ...
We present the first dynamic study of damage mechanisms in nanosized on-chip Cu interconnects caused...
Abstract − Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k ...
150 p.Electromigration has been a very active research topic ever since it was first discovered to b...
This thesis is motivated by reliability problems related to thermal stresses in electronic Cu/low-K ...
AbstractWork showing evidence of a shift in the Stress Migration (SM) peak profile temperature for s...
[[abstract]]Stress migration (SM) and electromigration (EM) were widely used to study the performanc...
[[abstract]]Copper stress migration (SM) at narrow metal finger connected with wide lead is investig...
International audienceIn 3D integration industrial context, copper is widely favored over othersmeta...
International audienceCopper-copper direct bonding is a fundamental procedure in three-dimensional i...
170 p.With changing materials systems and interconnect architectures from Al based metallization to ...
Failures introduced by the electromigration (EM) effect in copper interconnect is one of the top rel...
This research focuses on the stress-induced voiding in Cu interconnects. The different types, and th...
Several studies have illustrated that the assumption of robust SM performance of Cu is optimistic be...
[[abstract]]In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with ...
[[abstract]]In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with ...
We present the first dynamic study of damage mechanisms in nanosized on-chip Cu interconnects caused...
Abstract − Through comparing stress state of TEOS and SiLK-embedded structures, the effect of low-k ...
150 p.Electromigration has been a very active research topic ever since it was first discovered to b...
This thesis is motivated by reliability problems related to thermal stresses in electronic Cu/low-K ...
AbstractWork showing evidence of a shift in the Stress Migration (SM) peak profile temperature for s...
[[abstract]]Stress migration (SM) and electromigration (EM) were widely used to study the performanc...
[[abstract]]Copper stress migration (SM) at narrow metal finger connected with wide lead is investig...
International audienceIn 3D integration industrial context, copper is widely favored over othersmeta...
International audienceCopper-copper direct bonding is a fundamental procedure in three-dimensional i...
170 p.With changing materials systems and interconnect architectures from Al based metallization to ...
Failures introduced by the electromigration (EM) effect in copper interconnect is one of the top rel...