All publications on the single contact electron beam induced current (SC-EBIC) technique so far have been concerned with the application of the technique. This paper seeks to examine the theory behind the technique and supports it with experimental observation. It will be shown that the technique can be used, not only on electron and ion beam machines, but also on any scanning equipment that is capable of generating electron-hole pairs.Published versio
The electron-beam-induced current (EBIC) technique using scanning electron microscope (SEM) is one o...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
Electron beam induced current (EBIC) as well as Cathodoluminescence (CL) are widely used to investig...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
Abstract- The inf luence of trapping centres on the phase s h i f t of the short c i r c u i t curre...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
A theoretical investigation have been presented to exploring the influence of electrons beam current...
10.1109/PVSC.2013.6744299Conference Record of the IEEE Photovoltaic Specialists Conference951-955CRC...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
Measurements of electron beam induced currents (EBIC) can either be performed in a scanning electron...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
The Electron-Beam-Induced Current (EBIC) of a Schottky barrier irradiated by an electron beam perpen...
A Medida de Corrente Induzida por Feixe de Elétrons (EBIC - do inglês Electron Beam-induced Current ...
The laser cell scanner was used to characterize a number of solar cells made in various materials. A...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
The electron-beam-induced current (EBIC) technique using scanning electron microscope (SEM) is one o...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
Electron beam induced current (EBIC) as well as Cathodoluminescence (CL) are widely used to investig...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
Abstract- The inf luence of trapping centres on the phase s h i f t of the short c i r c u i t curre...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
A theoretical investigation have been presented to exploring the influence of electrons beam current...
10.1109/PVSC.2013.6744299Conference Record of the IEEE Photovoltaic Specialists Conference951-955CRC...
The present tutorial review provides a practical guide to the analysis of semiconductor devices usin...
Measurements of electron beam induced currents (EBIC) can either be performed in a scanning electron...
The electron beam induced current (EBIC) mode of a scanning electron microscopy is a useful techniqu...
The Electron-Beam-Induced Current (EBIC) of a Schottky barrier irradiated by an electron beam perpen...
A Medida de Corrente Induzida por Feixe de Elétrons (EBIC - do inglês Electron Beam-induced Current ...
The laser cell scanner was used to characterize a number of solar cells made in various materials. A...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
The electron-beam-induced current (EBIC) technique using scanning electron microscope (SEM) is one o...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
Electron beam induced current (EBIC) as well as Cathodoluminescence (CL) are widely used to investig...