Si1-xGex/Si MQW based uncooled microbolometer development and integration into 130 nm BiCMOS technology
- Baristiran Kaynak, C.
- Yamamoto, Y.
- Göritz, A.
- Korndörfer, F.
- Zaumseil, P.
- Kulse, P.
- Schulz, K.
- Fraschke, M.
- Marschmeyer, S.
- Wolansky, D.
- Wietstruck, M.
- Shafique, Atia
- Gürbüz, Yaşar
- Kaynak, Mehmet
DOIAbstract
In this paper, the recent progress on Sii-xGeVSi based high performance detector structures is presented. The process optimization of the detector by means of high TCR, low 1/f noise and appropriate resistance is summarized. The method of integrating the developed Sii-xGex/Si multi quantum well (MQW) detector structures into a 130 nm BiCMOS process is provided. The optimization studies required for the full integration of the suspended uncooled microbolometer device are presented
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