The first section of the dissertation concerns the growth and characterization of III-V-Bi films. The class of III-V semiconductors contains materials that are well-suited for applications in computation, detection, and energy conversion. Most common among these are the III-As materials, such as GaAs and InAs. When alloyed with Bi in small amounts, the bandgap of these materials decreases, allowing their use in applications in the infrared range, particularly sensing and lasing. The challenge lies in the controlled growth of III-As-Bi materials, as Bi tends to segregate in films and is immiscible with Ga, leading to inhomogeneous growths and rough surface morphologies. Addressing this challenge, we carried out a series of molecular beam epi...
GaAs based communication and optoelectronic devices are widely used in our daily lives. Applications...
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs a...
\ua9 2015 Elsevier B.V. All rights reserved. InAs films were grown on GaAs substrates by molecular b...
This dissertation presents a unique approach for conducting doctoral research in Materials Science a...
Use of Bi in III-V semiconductor films in recent years has a variety of applications. Bi lowers the ...
The control of Bi incorporation and material properties in III-V-Bi alloys has proved challenging du...
abstract: III-V-bismide semiconductor alloys are a class of materials with applications in the mid a...
In this thesis, molecular beam epitaxy (MBE) technology and the MBE growth of GaAsBi are investigate...
Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capa...
Tailoring the surface composition and morphology of materials to enable new electronic devices is im...
International audienceBismuth incorporation and surface reconstruction have been studied simultaneou...
In this thesis the properties of GaAsBi structures are investigated with respect to their growth par...
The strong rise of mobile and tethered data communication has a significant impact on global electri...
GaAs₁-xBix is an exciting new semiconductor alloy with numerous promising applications. Incorporatio...
This thesis investigates the optical and structural properties of GaAs1-xBix/GaAs SQWs and InGaBiAs ...
GaAs based communication and optoelectronic devices are widely used in our daily lives. Applications...
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs a...
\ua9 2015 Elsevier B.V. All rights reserved. InAs films were grown on GaAs substrates by molecular b...
This dissertation presents a unique approach for conducting doctoral research in Materials Science a...
Use of Bi in III-V semiconductor films in recent years has a variety of applications. Bi lowers the ...
The control of Bi incorporation and material properties in III-V-Bi alloys has proved challenging du...
abstract: III-V-bismide semiconductor alloys are a class of materials with applications in the mid a...
In this thesis, molecular beam epitaxy (MBE) technology and the MBE growth of GaAsBi are investigate...
Herein we investigate a (001)-oriented GaAs1−xBix/GaAs structure possessing Bi surface droplets capa...
Tailoring the surface composition and morphology of materials to enable new electronic devices is im...
International audienceBismuth incorporation and surface reconstruction have been studied simultaneou...
In this thesis the properties of GaAsBi structures are investigated with respect to their growth par...
The strong rise of mobile and tethered data communication has a significant impact on global electri...
GaAs₁-xBix is an exciting new semiconductor alloy with numerous promising applications. Incorporatio...
This thesis investigates the optical and structural properties of GaAs1-xBix/GaAs SQWs and InGaBiAs ...
GaAs based communication and optoelectronic devices are widely used in our daily lives. Applications...
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy on GaAs a...
\ua9 2015 Elsevier B.V. All rights reserved. InAs films were grown on GaAs substrates by molecular b...