We have grown by atomic layer epitaxy CdTe/MnTe tilted and serpentine superlattices. These heterostructures are formed by depositing in the step-flow growth mode fractional monolayer superlattices (CdTe)m(MnTe)n, with p=m+n∼1, onto 2 °A and 2 °B Cd0.95Zn0.05Te vicinal substrates. Transmission electron microscopy images reveal a good in-plane CdTe/MnTe separation and a uniform short-range superlattice period. The very existence of those superlattices imply that Te-based vicinal surfaces present a regular array of monomolecular steps, with no important step meandering and no step bunching
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the ...
[出版社版]We have grown ultrathin films of layered transition metal dichalcogenides (MoSez,NbSez) hetero...
International audienceContinuous, piezomodulated, and time-resolved optical spectroscopies have been...
Atomic deposition techniques are investigated for binary semiconductors of the telluride family, nam...
We report on a self-regulated method for the growth of tilted superlattices. It relies on the recons...
We have used reflection high-energy electron diffraction (RHEED) and x-ray diffraction to study the ...
International audienceAtomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. ...
Quantum wires were defined by holographic lithography and fabricated by dry etching techniques from ...
The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of th...
The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of th...
Considerable attention is now focussed on the II-VI class of semiconductor compounds. This renewed i...
We present an extensive study of the homoepitaxial growth of (001) CdTe with a particular emphasis o...
Corrugated CdZnTe substrates and quantum wires fabricated by dry etching techniques from (CdTe)/(MnT...
High-resolution electron microscopy is used to investigate the morphology of ultrathin pseudomorphic...
We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). ...
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the ...
[出版社版]We have grown ultrathin films of layered transition metal dichalcogenides (MoSez,NbSez) hetero...
International audienceContinuous, piezomodulated, and time-resolved optical spectroscopies have been...
Atomic deposition techniques are investigated for binary semiconductors of the telluride family, nam...
We report on a self-regulated method for the growth of tilted superlattices. It relies on the recons...
We have used reflection high-energy electron diffraction (RHEED) and x-ray diffraction to study the ...
International audienceAtomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. ...
Quantum wires were defined by holographic lithography and fabricated by dry etching techniques from ...
The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of th...
The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of th...
Considerable attention is now focussed on the II-VI class of semiconductor compounds. This renewed i...
We present an extensive study of the homoepitaxial growth of (001) CdTe with a particular emphasis o...
Corrugated CdZnTe substrates and quantum wires fabricated by dry etching techniques from (CdTe)/(MnT...
High-resolution electron microscopy is used to investigate the morphology of ultrathin pseudomorphic...
We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). ...
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the ...
[出版社版]We have grown ultrathin films of layered transition metal dichalcogenides (MoSez,NbSez) hetero...
International audienceContinuous, piezomodulated, and time-resolved optical spectroscopies have been...