High-resolution electron microscopy is used to investigate the morphology of ultrathin pseudomorphic (001) ZnTe and MnTe strained layers grown in CdTe. Local distortions of the crystal lattice are measured directly on high-resolution images by use of image processing software. In the case of ZnTe/CdTe superlattices, the method yields the location of Zn within each place in the heterostructure and the total amount of Zn per period. For MnTe layers embedded in CdTe, one can deduce the atomic morphology of the interfaces which are shown to present a clear asymmetry
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
A ZnTe layer grown on GaAs substrate by hot-wall epitaxy (HWE) was studied using transmission electr...
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the ...
High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and mi...
Challenges and opportunities arising from molecular beam epitaxial growth of topological crystalline...
Challenges and opportunities arising from molecular beam epitaxial growth of topological crystalline...
High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and mi...
The strain relaxation kinetics of ZnTe/CdTe and CdTe/ZnTe heterostructures grown on GaAs substrates ...
We report the method of the epitaxial growth of the core–shell ZnTe/ZnMgTe nanowires. The morphology...
This paper presents directly interpretable atomic resolution images of dislocation structures at int...
The structural characterization of ZnTe epilayers grown on (100)GaAs by metalorganic vapor-phase epi...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
A ZnTe layer grown on GaAs substrate by hot-wall epitaxy (HWE) was studied using transmission electr...
Spatially selective introduction of ultrathin ZnTe layers (1 to 3 mono-layers) into CdTe allows the ...
High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and mi...
Challenges and opportunities arising from molecular beam epitaxial growth of topological crystalline...
Challenges and opportunities arising from molecular beam epitaxial growth of topological crystalline...
High-resolution X-ray diffractometer was used to study structural quality, lattice parameters and mi...
The strain relaxation kinetics of ZnTe/CdTe and CdTe/ZnTe heterostructures grown on GaAs substrates ...
We report the method of the epitaxial growth of the core–shell ZnTe/ZnMgTe nanowires. The morphology...
This paper presents directly interpretable atomic resolution images of dislocation structures at int...
The structural characterization of ZnTe epilayers grown on (100)GaAs by metalorganic vapor-phase epi...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
International audienceHigh resolution scanning transmission electron microscopy and atom probe tomog...
A ZnTe layer grown on GaAs substrate by hot-wall epitaxy (HWE) was studied using transmission electr...