Add to ORKGCarrier and lattice relaxation after optical excitation is simulated for the prototypical wide-bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes as well as longitudinal-optic (LO), transverse-optic (TO) and acoustic phonons are distinguished. Carrier-LO-phonon interaction constitutes the dominant energy-loss channel as expected for polar semiconductors and hot-phonon effects are observed for strong optical excitation. Our results support the findings of recent time-resolved optical spectroscopy experiments
The dynamics of non-equilibrium carriers injected into GaAs by either 5 or 0.5 picosecond laser puls...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected...
Carrier relaxation and LO-phonon dynamics are investigated in GaAs crystals illuminated by picosecon...
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission ...
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission ...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
The thermalization of hot carriers and phonons gives direct insight into the scattering processes th...
The thermalization of hot carriers and phonons gives direct insight into the scattering processes th...
We present an analysis of the nonequilibrium thermodynamics and, mainly, a response function theory ...
The thermalization of hot carriers and phonons gives direct insight into the scattering processes th...
Recent progress made in the use of time-resolved pump-probe Raman scattering technique to study the ...
We have utilized subpicosecond laser pulses to excite and probe hot electrons and nonequilibrium lon...
The dynamics of non-equilibrium carriers injected into GaAs by either 5 or 0.5 picosecond laser puls...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected...
Carrier relaxation and LO-phonon dynamics are investigated in GaAs crystals illuminated by picosecon...
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission ...
Hot carrier relaxation has been studied in GaN using femtosecond time-resolved optical transmission ...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
The present paper illustrates a series of theoretical results on nonequilibrium phonon effects based...
The thermalization of hot carriers and phonons gives direct insight into the scattering processes th...
The thermalization of hot carriers and phonons gives direct insight into the scattering processes th...
We present an analysis of the nonequilibrium thermodynamics and, mainly, a response function theory ...
The thermalization of hot carriers and phonons gives direct insight into the scattering processes th...
Recent progress made in the use of time-resolved pump-probe Raman scattering technique to study the ...
We have utilized subpicosecond laser pulses to excite and probe hot electrons and nonequilibrium lon...
The dynamics of non-equilibrium carriers injected into GaAs by either 5 or 0.5 picosecond laser puls...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...
The techniques of phonon imaging are used in conjunction with photoluminescence measurements to dete...