Ion beam etching has been successfully applied to InP using an Ar/O2-gas mixture. Varying angles of beam incidence resulted in different shapes of the etched profiles with the achievement even of undercutting. Good selectivity with respect to Novolak-type photoresists prevails at higher accelerating voltages
The ability to fabricate high aspect ratio features in InP is crucial for the development of optoele...
In this study, an InP layer was transferred onto a Si substrate coated with a thermal oxide, through...
Ion beam figuring (IBF) is an advanced technique that is been used for more than 10 years as a final...
A reactive ion beam etching process (RIBE) of InP with N2 and N2/O2 mixtures is described. The appli...
A new process for RIE of InP is presented, employing mixtures of CH4 and H2 as etching gases. Thus p...
Chemically assisted ion beam etching (CAIBE) involving an Ar ion beam an a halogen ambient gas (Cl2,...
grantor: University of TorontoInductively coupled plasma (ICP) etching is a promising low-...
We have developed Cl2 /Ar and IBr3 /Ar chemicaily-assisted ion-beam etching (CAIBE) processes, which...
A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process result...
Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture usi...
International audienceIon beam etching (IBE) is a very promising technique in microelectronics becau...
We produce very smooth vertical sidewalls with high anisotropy in III-V semiconductors by ion beam e...
We report on the room temperature dry etching of InP by inductively coupled plasma (ICP) using Cl2/C...
having a smaller activation energy. Use of the description "electrocatalysis " in this cas...
A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been car...
The ability to fabricate high aspect ratio features in InP is crucial for the development of optoele...
In this study, an InP layer was transferred onto a Si substrate coated with a thermal oxide, through...
Ion beam figuring (IBF) is an advanced technique that is been used for more than 10 years as a final...
A reactive ion beam etching process (RIBE) of InP with N2 and N2/O2 mixtures is described. The appli...
A new process for RIE of InP is presented, employing mixtures of CH4 and H2 as etching gases. Thus p...
Chemically assisted ion beam etching (CAIBE) involving an Ar ion beam an a halogen ambient gas (Cl2,...
grantor: University of TorontoInductively coupled plasma (ICP) etching is a promising low-...
We have developed Cl2 /Ar and IBr3 /Ar chemicaily-assisted ion-beam etching (CAIBE) processes, which...
A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process result...
Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture usi...
International audienceIon beam etching (IBE) is a very promising technique in microelectronics becau...
We produce very smooth vertical sidewalls with high anisotropy in III-V semiconductors by ion beam e...
We report on the room temperature dry etching of InP by inductively coupled plasma (ICP) using Cl2/C...
having a smaller activation energy. Use of the description "electrocatalysis " in this cas...
A parametric study of Inductively Coupled Plasma etching of InP, InSb, InGaP and InGaAs has been car...
The ability to fabricate high aspect ratio features in InP is crucial for the development of optoele...
In this study, an InP layer was transferred onto a Si substrate coated with a thermal oxide, through...
Ion beam figuring (IBF) is an advanced technique that is been used for more than 10 years as a final...
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