Molecular beam epitaxy of III-V compounds

A new technique for epitaxial growth of thin semiconductor films, molecular beam epitaxy (MBE), provides superior control over composition, thickness and doping profile in the direction of growth on an atomic scale. Electrical and optical properties of III-V semiconductor films grown by MBE have been improved quite recently. Thus, the MBE technique offers the feasibility of tailoring new epitaxial superlattice structures with promising future device applications