Add to ORKGDesign considerations for low noise charge measurement and their application in CMOS electronics are described. The amplifier driver combination whose noise performance has been measured in detail as well as the analog multiplexing silicon strip detector readout electronics are designed with low power consumption and can be operated in pulsed mode so as to reduce heat dissipation even further in many applications. (IMS
A theoretical and experimental study of the relationship between noise and bias in the metal-oxide-s...
This paper is motivated by the growing interest of the detector and readout electronics community t...
International audienceA low-power analog front-end circuit for silicon (Si) detectors has been fabri...
Design considerations for low noise charge measurement and their application in CMOS electronics are...
A 128 channel readout chip suitable for readout with 50 mym pitch has been developed in CMOS technol...
Low noise design of charge sensitive amplifiers in deep submicron CMOS technologies is discussed ba...
Low noise design of charge sensitive amplifiers in deep submicron CMOS technologies is discussed bas...
Deep sub-micron CMOS technologies provide well established solutions to the implementation of low-no...
Two readout systems for silicon strip detectors (128- and 64-channels) have been developed in CMOS t...
Rapid development in CMOS technology has resulted in its suitability for the implementation of reado...
A low power analog front-end circuit for silicon (Si) detectors has been fabricated in 0.35 µm CMOS ...
Submicron CMOS technologies provide well-established solutions to the implementation of low noise fr...
Rapid development in CMOS technology has resulted in its suitability for the implementation of reado...
Deep submicron CMOS technologies are widely used for the implementation of low noise front-end elect...
A low power analog front-end circuit for silicon (Si) detectors has been fabricated in 0.35 µm CMOS ...
A theoretical and experimental study of the relationship between noise and bias in the metal-oxide-s...
This paper is motivated by the growing interest of the detector and readout electronics community t...
International audienceA low-power analog front-end circuit for silicon (Si) detectors has been fabri...
Design considerations for low noise charge measurement and their application in CMOS electronics are...
A 128 channel readout chip suitable for readout with 50 mym pitch has been developed in CMOS technol...
Low noise design of charge sensitive amplifiers in deep submicron CMOS technologies is discussed ba...
Low noise design of charge sensitive amplifiers in deep submicron CMOS technologies is discussed bas...
Deep sub-micron CMOS technologies provide well established solutions to the implementation of low-no...
Two readout systems for silicon strip detectors (128- and 64-channels) have been developed in CMOS t...
Rapid development in CMOS technology has resulted in its suitability for the implementation of reado...
A low power analog front-end circuit for silicon (Si) detectors has been fabricated in 0.35 µm CMOS ...
Submicron CMOS technologies provide well-established solutions to the implementation of low noise fr...
Rapid development in CMOS technology has resulted in its suitability for the implementation of reado...
Deep submicron CMOS technologies are widely used for the implementation of low noise front-end elect...
A low power analog front-end circuit for silicon (Si) detectors has been fabricated in 0.35 µm CMOS ...
A theoretical and experimental study of the relationship between noise and bias in the metal-oxide-s...
This paper is motivated by the growing interest of the detector and readout electronics community t...
International audienceA low-power analog front-end circuit for silicon (Si) detectors has been fabri...