Three new EPR signals labelled FR1, FR2 and FR3 have been observed in undoped as grown LEC GaAs. They are well observable only below 10K, their intensities are high and they appear only after optical excitation. Thus the defects involved are electrically active and occur in high concentrations. Tentative models for the three centers are presented. (IAF
We present a study of room-temperature, ultrafast photoconductivity associated with a strong, sub-ba...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐i...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
Electron paramagnetic resonance spectra of as-grown, semi-insulating LEC GaAs at 9 GHz and 35 GHz ha...
The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies o...
Electron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR...
The photo-EPR study of semi-insulating GaAs:Cr is reported. For non-irradiated samples the temperatu...
The EPR study of gamma-ray irradiated SI GaAs:Cr is reported. The experimental results show that gam...
The gamma radiation defects were studied by the deep level transient spectroscopy (DLTS) and the con...
Infrared optical absorption and Hall-effect techniques were employed to study deep defects in As-ric...
Using infrared spectroscopy the photoexcitation of free carriers with sub bandgap monochromatic ligh...
A comprehensive characterization, including room temperature Hall effect, near infrared absorption, ...
[[abstract]]A shallow acceptor-like defect labeled “A” is frequently incorporated in molecular beam ...
SIGLEAvailable from British Library Lending Division - LD:D55946/85 / BLDSC - British Library Docume...
We present a study of room-temperature, ultrafast photoconductivity associated with a strong, sub-ba...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐i...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
Electron paramagnetic resonance spectra of as-grown, semi-insulating LEC GaAs at 9 GHz and 35 GHz ha...
The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies o...
Electron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR...
The photo-EPR study of semi-insulating GaAs:Cr is reported. For non-irradiated samples the temperatu...
The EPR study of gamma-ray irradiated SI GaAs:Cr is reported. The experimental results show that gam...
The gamma radiation defects were studied by the deep level transient spectroscopy (DLTS) and the con...
Infrared optical absorption and Hall-effect techniques were employed to study deep defects in As-ric...
Using infrared spectroscopy the photoexcitation of free carriers with sub bandgap monochromatic ligh...
A comprehensive characterization, including room temperature Hall effect, near infrared absorption, ...
[[abstract]]A shallow acceptor-like defect labeled “A” is frequently incorporated in molecular beam ...
SIGLEAvailable from British Library Lending Division - LD:D55946/85 / BLDSC - British Library Docume...
We present a study of room-temperature, ultrafast photoconductivity associated with a strong, sub-ba...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
A new center related to AsGa has been found at relatively high concentrations (1017 cm-;3) in semi‐i...