Picosecond optoelectronic switches are used to generate electrical pulses with picosecond duration from correspondingly short optical pulses. This is accomplished by fast photoconductors based on materials with short free carrier lifetime, like amorphous semiconductors or defect-rich crystalline materials. Picosecond switches are employed for both fundamental studies of transport in the respective material as well as for applications in high speed electronics and optoelectronics. We shall describe the operation principle of picosecond switches and report some of the recent applications including picosecond studies of transport mechanisms in implanted Si on sapphire and synchronous mode-locking of semiconductor lasers. (IAF
The drive towards photonic integrated circuits (PIC) necessitates the development of new devices and...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...
The properties of a new class of materials grown by molecular beam epitaxy at very low substrate tem...
A switch element has been developed so that a kilovolt step voltage should be supplied to a 50Ω tran...
The first part of this thesis deals with the principles and practice of the passive mode locking of ...
Pulses tens of picoseconds in duration have been produced from semiconductor lasers both by injectio...
The use of opto-electronic devices for ultrafast switching applications is a practical alternative t...
A fully-integrated silicon-optical-switch technology is reported that demonstrates one picosecond sa...
Femtosecond laser pulse irradiation enables precise control of conductivity in materials, revolution...
[[abstract]]Experimental and theoretical results exploring the fundamental limits to the generation ...
High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electro...
Using a new mechanism of electrical pulse generation, we have generated 350 fs (full width at half m...
This dissertation has investigated ultrafast optoelectronic techniques and their application to the ...
We study the process of diffusive conduction that we use in our optoelectronic switches to achieve r...
High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electric...
The drive towards photonic integrated circuits (PIC) necessitates the development of new devices and...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...
The properties of a new class of materials grown by molecular beam epitaxy at very low substrate tem...
A switch element has been developed so that a kilovolt step voltage should be supplied to a 50Ω tran...
The first part of this thesis deals with the principles and practice of the passive mode locking of ...
Pulses tens of picoseconds in duration have been produced from semiconductor lasers both by injectio...
The use of opto-electronic devices for ultrafast switching applications is a practical alternative t...
A fully-integrated silicon-optical-switch technology is reported that demonstrates one picosecond sa...
Femtosecond laser pulse irradiation enables precise control of conductivity in materials, revolution...
[[abstract]]Experimental and theoretical results exploring the fundamental limits to the generation ...
High gain photoconductive semiconductor switches (PCSS) are being used to produce high power electro...
Using a new mechanism of electrical pulse generation, we have generated 350 fs (full width at half m...
This dissertation has investigated ultrafast optoelectronic techniques and their application to the ...
We study the process of diffusive conduction that we use in our optoelectronic switches to achieve r...
High gain GaAs photoconductive semiconductor switches (PCSS) are being used in a variety of electric...
The drive towards photonic integrated circuits (PIC) necessitates the development of new devices and...
A novel ultra-wideband electromagnetic pulse generating method based on the photoconductive semicond...
The properties of a new class of materials grown by molecular beam epitaxy at very low substrate tem...