Halbleiterbauelement, das eine Schicht aus transparentem, n-leitendem Material aufweist, und Verwendung derartiger Bauelemente

EP 173643 A UPAB: 19930922 A semiconductor device, including a layer of optically transparent n-conducting material of polycrystalline to amorphous structure, has at least one layer sequence in which a monocrystalline p- or n-doped layer of InP, InGaAs or InGaAsP semiconductor material and the layer of transparent n-conducting material form a pn junction or a quasi-ohmic contact. USE - The device is used in the assembly of (opto-)electronic integrated circuits (claimed), esp. in monomodal systems in optical communication and also in monolithic circuits. 7/