Using infrared spectroscopy the photoexcitation of free carriers with sub bandgap monochromatic light is investigated. The results are interpreted in terms of photoionization and carrier trapping at the EL2 center and two additional centers. The microscopic nature of the additional centers is not known. Similarities of the present spectral response with results obtained in other experiments are pointed out. (IAF
We report our results of experimental study of photovoltage induced by pulsed CO2 laser in GaAs p-n ...
Infrared optical absorption and Hall-effect techniques were employed to study deep defects in As-ric...
We report on an attempt to observe the EL2 → EL2* transition in semi-insulating GaAs using Doppler b...
The bleaching of the EL2 absorption and its thermal regeneration are typical time-dependent processe...
Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a numb...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and ...
Thermally stimulated current spectroscopy (TSC) with near band-edge and infrared (IR) light excitati...
We have measured the electron optical capture cross section, σ0n(hν), of EL2 (the most important nat...
The dynamic process of light illumination of GaAs is studied numerically in this paper to understand...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
Electron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR...
Studies on the electrical and optical properties of EL2 in various GaAs crystals are described espec...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
We report our results of experimental study of photovoltage induced by pulsed CO2 laser in GaAs p-n ...
Infrared optical absorption and Hall-effect techniques were employed to study deep defects in As-ric...
We report on an attempt to observe the EL2 → EL2* transition in semi-insulating GaAs using Doppler b...
The bleaching of the EL2 absorption and its thermal regeneration are typical time-dependent processe...
Recent infrared spectroscpic observations of local vibrational mode absorptions have revealed a numb...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
The photo response of the EL2 absorption band and of the As+ Ga ESR signal in GaAs is described and ...
Thermally stimulated current spectroscopy (TSC) with near band-edge and infrared (IR) light excitati...
We have measured the electron optical capture cross section, σ0n(hν), of EL2 (the most important nat...
The dynamic process of light illumination of GaAs is studied numerically in this paper to understand...
A new photoexcitation band of the FR3 EPR signal in undoped semiinsulating GaAs has been discovered....
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
Electron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR...
Studies on the electrical and optical properties of EL2 in various GaAs crystals are described espec...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
We report our results of experimental study of photovoltage induced by pulsed CO2 laser in GaAs p-n ...
Infrared optical absorption and Hall-effect techniques were employed to study deep defects in As-ric...
We report on an attempt to observe the EL2 → EL2* transition in semi-insulating GaAs using Doppler b...
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