Add to ORKGA survey of material characterization techniques used to support and to control the fabrication of GaAs microelectronic devices is presented. The evaluation of semiinsulating substrates and of active layers is emphasized. Particular attention is given to those measurements that allow nondestructive and topographic characterization. Various correlations between properties of starting materials, results of fabrication processes and the final device performance are discussed. (IAF
The electrical and structural properties of GaAs and Al[formula omitted]Ga₁-[formula omitted]As grow...
To evaluate polishing and cleaning methods for gallium arsenide, the sur-face film thickness is esti...
This thesis describes an experimental study of conducting layers formed in gallium arsenide (GaAs) s...
In this paper, we discuss the preparation of GaAs crystal surfaces by me-chanical and chemical techn...
Summarizes electrical measurement data in GaAs materials and devices, and describes in detail the te...
A study has been conducted to investigate and compare the growth, strain, defects, electrical and op...
The purpose of this work was to study certain aspects of device fabrication and material properties ...
Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integ...
International audienceGaAs is for many people regarded as being too difficult and expensive for a se...
The primary objective of the work described in this thesis was to study the influence of undoped LEC...
Free carrier electric microwave absorption is applied to the analysis of ion implanted and epitaxial...
This thesis consists of a study of several qualification techniques for SI LEC GaAs and the applicat...
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half...
1. Objective: Development and optimization of fundamental knowledge, processes and technologies for ...
The electrical and transport properties of GaAs crystals such as resistivity (ρ), mobility (µ) and c...
The electrical and structural properties of GaAs and Al[formula omitted]Ga₁-[formula omitted]As grow...
To evaluate polishing and cleaning methods for gallium arsenide, the sur-face film thickness is esti...
This thesis describes an experimental study of conducting layers formed in gallium arsenide (GaAs) s...
In this paper, we discuss the preparation of GaAs crystal surfaces by me-chanical and chemical techn...
Summarizes electrical measurement data in GaAs materials and devices, and describes in detail the te...
A study has been conducted to investigate and compare the growth, strain, defects, electrical and op...
The purpose of this work was to study certain aspects of device fabrication and material properties ...
Semi-insulating gallium arsenide substrates are widely used for microwave discrete devices and integ...
International audienceGaAs is for many people regarded as being too difficult and expensive for a se...
The primary objective of the work described in this thesis was to study the influence of undoped LEC...
Free carrier electric microwave absorption is applied to the analysis of ion implanted and epitaxial...
This thesis consists of a study of several qualification techniques for SI LEC GaAs and the applicat...
Infrared transmission topography is shown to be useful for evaluating GaAs wafers. Whole-wafer, half...
1. Objective: Development and optimization of fundamental knowledge, processes and technologies for ...
The electrical and transport properties of GaAs crystals such as resistivity (ρ), mobility (µ) and c...
The electrical and structural properties of GaAs and Al[formula omitted]Ga₁-[formula omitted]As grow...
To evaluate polishing and cleaning methods for gallium arsenide, the sur-face film thickness is esti...
This thesis describes an experimental study of conducting layers formed in gallium arsenide (GaAs) s...