Erbium doping of molecular beam epitaxial GaAs

The doping of molecular beam epitaxial GaAs with erbium up to a concentration of 2x10E19 cm-3 has been successfully demonstrated. Up to a concentration of about 5x10E18 cm-3 the surface morphology remained good but for higher doping levels the surface became structured. Hall and profile measurements indicate that erbium doping gives rise to a trapping level capable of compensating silicon-doped layers. For the first time photoluminescence from a rare earth element incorporated in a III-V semiconductor has been observed at room temperature. (IAF