Add to ORKGAbsorbed X-ray photons generate electrons which influence the resolution in X-ray lithography. In this paper electrons released from the mask membrane, the resist and the sublayer are characterized experimentally. The effects of resist and target materials, the angular distribution of released electrons, the dose and the development time dependence are investigated. The results show that the influence on the resolution is in the order of 20-35 nm. Furthermore, the influence of fluorescence radiation is negligible. (IMT
X-ray mask defects occur mainly as particles on the mask and as random defects in the absorber. Howe...
One challenge existing since the invention of electron-beam lithography (EBL) is understanding the e...
At the heart of the tremendous advances of optical microlithography are the resists and the people w...
Resolution in x-ray lithography is influenced mainly by the exposure geometry, the resist's behavior...
In this thesis, a concept for a demagnifying lithography setup using hard x-rays is introduced. As d...
The replicated resist pattern characteristics caused by photoelectrons and Auger electrons generated...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
A limiting factor in electron beam lithography is the proximity effect. In the special case of X-ray...
The exposure atmosphere effect for poly (glycidyl methacrylate) (PGMA) in x-ray lithography using an...
This article describes the limitations of proximal probe lithography due to electrons that are mirro...
The electron energy of, e.g., 50 keV has advantages over less electron energy for X-ray mask substra...
Soft x-ray radiation is affected neither by scattering in the resist nor by reflection from the subs...
Includes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Pr...
In this paper, the influence of the absorption shot noise on line edge roughness (LER) of photoresis...
EUV lithography (EUVL) is a candidate technology for patterning of ever shrinking featuresizes in in...
X-ray mask defects occur mainly as particles on the mask and as random defects in the absorber. Howe...
One challenge existing since the invention of electron-beam lithography (EBL) is understanding the e...
At the heart of the tremendous advances of optical microlithography are the resists and the people w...
Resolution in x-ray lithography is influenced mainly by the exposure geometry, the resist's behavior...
In this thesis, a concept for a demagnifying lithography setup using hard x-rays is introduced. As d...
The replicated resist pattern characteristics caused by photoelectrons and Auger electrons generated...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
A limiting factor in electron beam lithography is the proximity effect. In the special case of X-ray...
The exposure atmosphere effect for poly (glycidyl methacrylate) (PGMA) in x-ray lithography using an...
This article describes the limitations of proximal probe lithography due to electrons that are mirro...
The electron energy of, e.g., 50 keV has advantages over less electron energy for X-ray mask substra...
Soft x-ray radiation is affected neither by scattering in the resist nor by reflection from the subs...
Includes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Pr...
In this paper, the influence of the absorption shot noise on line edge roughness (LER) of photoresis...
EUV lithography (EUVL) is a candidate technology for patterning of ever shrinking featuresizes in in...
X-ray mask defects occur mainly as particles on the mask and as random defects in the absorber. Howe...
One challenge existing since the invention of electron-beam lithography (EBL) is understanding the e...
At the heart of the tremendous advances of optical microlithography are the resists and the people w...