Add to ORKGA linewidtdh metrology based on electron optical methods has been developed and applicated to X-ray masks with subhalf-micron feature size. The sensitivity of the measurement technique to process variations has been investigated. Linewidth down to 0.2 mym on X-ray masks are measured automatically with high precision (24 nm at 3 sigma) and high throughput feasibility. (IMT
High-accuracy film thickness measurements in the range below 100 nm can be made by various complex m...
Includes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Pr...
In the evaluation of new manufacturing processes, metrology is a key function, begin-fling at with f...
As optical lithography advances toward the 10 nm mark, much effort is being expended to push electro...
The metrology in submicron lilthography is an increasingly difficult task. Especially the control of...
This paper describes a multi-layer technique for e-beam written x-ray master masks with electroplate...
Design criteria and performance data for the E-Beam Measuring Tool (EBMT-5; Cambridge Instruments Lt...
This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical ...
Metrology is the science of measurement. It is also a prerequisite for maintaining a high quality in...
Bidirectional measurements are to be performed for the calibrations and the reverification of the pe...
We report the first at-wavelength line edge roughness measurements of patterned EUV lithography mask...
The measurement of line widths optically allows fast, easy non-contact measurements and finds applic...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...
The advent of fully coherent free-electron laser and diffraction-limited synchrotron radiation stora...
High-accuracy film thickness measurements in the range below 100 nm can be made by various complex m...
Includes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Pr...
In the evaluation of new manufacturing processes, metrology is a key function, begin-fling at with f...
As optical lithography advances toward the 10 nm mark, much effort is being expended to push electro...
The metrology in submicron lilthography is an increasingly difficult task. Especially the control of...
This paper describes a multi-layer technique for e-beam written x-ray master masks with electroplate...
Design criteria and performance data for the E-Beam Measuring Tool (EBMT-5; Cambridge Instruments Lt...
This paper compares electrical, optical, and atomic force microscope (AFM) measurements of critical ...
Metrology is the science of measurement. It is also a prerequisite for maintaining a high quality in...
Bidirectional measurements are to be performed for the calibrations and the reverification of the pe...
We report the first at-wavelength line edge roughness measurements of patterned EUV lithography mask...
The measurement of line widths optically allows fast, easy non-contact measurements and finds applic...
Image resolution in x-ray proximity printing is influenced by diffraction, photo and Auger electron ...
Along with the introduction of the 32 nm technology node in the next years, the methods for correcti...
The advent of fully coherent free-electron laser and diffraction-limited synchrotron radiation stora...
High-accuracy film thickness measurements in the range below 100 nm can be made by various complex m...
Includes bibliographical references (p. 155-163).Research supported by Joint Services Electronics Pr...
In the evaluation of new manufacturing processes, metrology is a key function, begin-fling at with f...