We report on the emission of light from Si MOS and GaAs MES devices. Processes involving band-to-band transitions and a Bremsstrahlung-continuum below the bandgap are shown to exist. Spatially nonuniform emission from the MESFETs is observed. The GaAs results are compared with Monte Carlo simulations
The emission of visible light from GaAs metal-semiconductor field-effect transistors under high elec...
This work presents a detailed investigation of light emission phenomena connected with the presence ...
The processes related to the presence of hot carriers in power AlGaAs/GaAs heterostructure field eff...
We show that the experimental measurement of the electromagnetic emission spectrum from a MESFET dev...
A computational analysis of light emission from hot carriers in GaAs due to direct intraband conduct...
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the elec...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
AbstractAs GaAs IC integration continues, device characterization and failure analysis get more diff...
The visible light emitted from GaAs-based transistors biased at high voltages has been studied and a...
We show how light emission in modern submicrometric semiconductor devices can be used to extract muc...
Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place ...
We present a detailed investigation of hot carrier induced impact ionization and light emission in s...
This work reviews the most recent experimntal results concerning the characterization of hot-elecctr...
A study of light emission from GaAs metal‐semiconductor field effect transistors and its connection ...
In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel...
The emission of visible light from GaAs metal-semiconductor field-effect transistors under high elec...
This work presents a detailed investigation of light emission phenomena connected with the presence ...
The processes related to the presence of hot carriers in power AlGaAs/GaAs heterostructure field eff...
We show that the experimental measurement of the electromagnetic emission spectrum from a MESFET dev...
A computational analysis of light emission from hot carriers in GaAs due to direct intraband conduct...
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the elec...
Light emission in submicrometer gate AlGaAs/GaAs HEMTs and GaAs MESFETs has been observed at high dr...
AbstractAs GaAs IC integration continues, device characterization and failure analysis get more diff...
The visible light emitted from GaAs-based transistors biased at high voltages has been studied and a...
We show how light emission in modern submicrometric semiconductor devices can be used to extract muc...
Impact ionization phenomena accompanied by light emission in the 1.1-3.1 eV energy range take place ...
We present a detailed investigation of hot carrier induced impact ionization and light emission in s...
This work reviews the most recent experimntal results concerning the characterization of hot-elecctr...
A study of light emission from GaAs metal‐semiconductor field effect transistors and its connection ...
In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel...
The emission of visible light from GaAs metal-semiconductor field-effect transistors under high elec...
This work presents a detailed investigation of light emission phenomena connected with the presence ...
The processes related to the presence of hot carriers in power AlGaAs/GaAs heterostructure field eff...