Add to ORKGThe diffusion of gold in silicon is described by the kick-out and dissociative mechanism. The resulting set of four coupled partial differential equations is completely solved numerically. Splitting the self-diffusion coefficients, we find that the gold is strongly influenced by the equilibrium concentrations of point-defects. As a result of our work, we can give an upper boundary for the value of the equilibrium concentrations of vacancies and a lower boundary for the diffusivity of vacancies
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
P diffuses predominantly by the interstitial mechanism in Si. Assuming that there is a strong bindin...
Platinum diffusion experiments were used in the past to establishestimates for the equilibrium conce...
The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism....
out to be more involved than Eq. [15]. Therefore, it was decided to program Eq. [15] instead. A comp...
The concentration of substitutional atoms $N_{\rm Aus}$, transformed by the kick-out mechanism as go...
The effects of oxidation of Si which established that vacancies (V) and Si self interstitials (I) co...
In this paper the boundary conditions for point defect distributions in monocrystalline silicon are ...
We have studied by Deep Level Transient Spectroscopie (DLTS) the energy levels introduced by gold di...
Silicon technology is based on doping with atoms from the groups III and V of the periodic system, w...
The vacancies and self-interstitials in silicon are involved, in a straightforward way, in various p...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
Resistivity changes caused by gold diffusion into silicon were studied in de-tail. The results did n...
Diffusion-induced dislocations and precipitates have been studied through electron microscopy as a f...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
P diffuses predominantly by the interstitial mechanism in Si. Assuming that there is a strong bindin...
Platinum diffusion experiments were used in the past to establishestimates for the equilibrium conce...
The diffusion of platinum in silicon is described by the kick-out and by the dissociative mechanism....
out to be more involved than Eq. [15]. Therefore, it was decided to program Eq. [15] instead. A comp...
The concentration of substitutional atoms $N_{\rm Aus}$, transformed by the kick-out mechanism as go...
The effects of oxidation of Si which established that vacancies (V) and Si self interstitials (I) co...
In this paper the boundary conditions for point defect distributions in monocrystalline silicon are ...
We have studied by Deep Level Transient Spectroscopie (DLTS) the energy levels introduced by gold di...
Silicon technology is based on doping with atoms from the groups III and V of the periodic system, w...
The vacancies and self-interstitials in silicon are involved, in a straightforward way, in various p...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
Resistivity changes caused by gold diffusion into silicon were studied in de-tail. The results did n...
Diffusion-induced dislocations and precipitates have been studied through electron microscopy as a f...
The commonly used partial differential equations for point defect diffusion are reviewed. Special at...
P diffuses predominantly by the interstitial mechanism in Si. Assuming that there is a strong bindin...
Platinum diffusion experiments were used in the past to establishestimates for the equilibrium conce...