Add to ORKGSF sub 6 RIE plasmas during poly-silicon etching are investigated by optical emission spectroscopy (OES) and quadrupole mass spectrometry (QMS). The variations of the feed gas flow and the silicon substrate area are used to derive a simple model function for the poly-Si etchrates. It suggests a combination of pure chemical etching by atomic fluorine and chemically enhanced sputtering by the predominant positive ions, namely SF plus sub 3. A reaction probability of atomic fluorine with poly-Si is found to be about 0.04
In semiconductor production, the wafers should be processed in different chambers which are readily ...
The mechanisms responsible for etching of silicon in low pressure SF 6 plasma under low energy ion i...
The production of modern integrated circuits relies upon plasma processing to achieve the necessary ...
Investigations on SF sub 6 plasmas at variation of the machine parameters, substrate composition and...
Plasma etching processes are widely used to produce patterns in the fabrication of microelectronic d...
wall of the etched pattern during etching WxSi/poly Si/SiO2. 3 Reac-tive fluorine ions or radicals a...
In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in ...
The response ofpolysilicon etching characteristics and various diagnostic measurements to pressure, ...
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that d...
The plasma etching of semiconductor surfaces with fluorine-containing compounds has technological in...
International audienceIn this paper, we analyse, by the use of different plasma diagnostics, appeara...
The effects of gas additives in tetrafluoromethane plasma on the etching characteristics with or wit...
Particle formation during low pressure SF6/argon etching of silicon in a single wafer parallel plate...
In this work, a numerical modelling analysis of the gas-phase decomposition of pure SF6 and SF6/O2 m...
9 pagesInternational audienceCryogenic deep etching of silicon is investigated using SO2 for passiva...
In semiconductor production, the wafers should be processed in different chambers which are readily ...
The mechanisms responsible for etching of silicon in low pressure SF 6 plasma under low energy ion i...
The production of modern integrated circuits relies upon plasma processing to achieve the necessary ...
Investigations on SF sub 6 plasmas at variation of the machine parameters, substrate composition and...
Plasma etching processes are widely used to produce patterns in the fabrication of microelectronic d...
wall of the etched pattern during etching WxSi/poly Si/SiO2. 3 Reac-tive fluorine ions or radicals a...
In this work, a numerical modeling analysis of the gas-phase decomposition of SF6 / O2 mixtures, in ...
The response ofpolysilicon etching characteristics and various diagnostic measurements to pressure, ...
As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that d...
The plasma etching of semiconductor surfaces with fluorine-containing compounds has technological in...
International audienceIn this paper, we analyse, by the use of different plasma diagnostics, appeara...
The effects of gas additives in tetrafluoromethane plasma on the etching characteristics with or wit...
Particle formation during low pressure SF6/argon etching of silicon in a single wafer parallel plate...
In this work, a numerical modelling analysis of the gas-phase decomposition of pure SF6 and SF6/O2 m...
9 pagesInternational audienceCryogenic deep etching of silicon is investigated using SO2 for passiva...
In semiconductor production, the wafers should be processed in different chambers which are readily ...
The mechanisms responsible for etching of silicon in low pressure SF 6 plasma under low energy ion i...
The production of modern integrated circuits relies upon plasma processing to achieve the necessary ...