For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentration of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles
A two-dimensional Monte Carlo simulation code has been applied to trench implantation as a function ...
[[abstract]]Ion implantation is a standart doping technique for semiconductor material. For shallow ...
In this, the first of two papers, the problem of constructing ion implantation profiles in one and t...
An optimized delineation. technique was described.Using this technique, up to three equi-concentrati...
A new sofware tool was developed which allows a simulation of two-dimensional ion implantation profi...
As device dimensions decrease and packing densities increase, the need for accurate mapping of dopan...
Shrinking device dimensions require the reduction of high temperature steps or their replacement by ...
A two-dimensional secondary ion mass spectrometry dopant profiling technique, using a specially prep...
A chemical delineation technique suitable for two dimensional dopant profiling has been investigated...
Advanced integrated circuit processing requires detailed modeling of each stage of the fabrication, ...
[Abstract] A point-source model of ion implantation is proposed for highly-accurate calculation of i...
The lateral spread of dopant under the implant mask edge and its behaviour during thermal processing...
For the analytical description of doping profiles after Ion Implantation, good multilayer models are...
This paper outlines a novel analytical model for the two-dimensional description of ion implantation...
Analytical calculations of two-dimensional implantation profiles taking into account the different s...
A two-dimensional Monte Carlo simulation code has been applied to trench implantation as a function ...
[[abstract]]Ion implantation is a standart doping technique for semiconductor material. For shallow ...
In this, the first of two papers, the problem of constructing ion implantation profiles in one and t...
An optimized delineation. technique was described.Using this technique, up to three equi-concentrati...
A new sofware tool was developed which allows a simulation of two-dimensional ion implantation profi...
As device dimensions decrease and packing densities increase, the need for accurate mapping of dopan...
Shrinking device dimensions require the reduction of high temperature steps or their replacement by ...
A two-dimensional secondary ion mass spectrometry dopant profiling technique, using a specially prep...
A chemical delineation technique suitable for two dimensional dopant profiling has been investigated...
Advanced integrated circuit processing requires detailed modeling of each stage of the fabrication, ...
[Abstract] A point-source model of ion implantation is proposed for highly-accurate calculation of i...
The lateral spread of dopant under the implant mask edge and its behaviour during thermal processing...
For the analytical description of doping profiles after Ion Implantation, good multilayer models are...
This paper outlines a novel analytical model for the two-dimensional description of ion implantation...
Analytical calculations of two-dimensional implantation profiles taking into account the different s...
A two-dimensional Monte Carlo simulation code has been applied to trench implantation as a function ...
[[abstract]]Ion implantation is a standart doping technique for semiconductor material. For shallow ...
In this, the first of two papers, the problem of constructing ion implantation profiles in one and t...
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