A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells

Harris, C.
Monemar, B.
Kalt, H.
Schweizer, T.
Köhler, K.

Publication date

January 1990

Abstract

The transition from non-degenerate to degenerate doping in silicon center-doped 100 A GaAs/AlGaAs quantum wells has been studied via the observed excitonic and free carrier related photoluminescence (PL) and PL excitation (PLE) spectra. The critical doping level is about 1.0x10 high12qcm in 2D, a factor 2-3 higher than in bulk GaAs (3D). The observed effects of high donor doping on recombination dynamics and non-radiative processes are discussed

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A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells

Abstract

Extracted data

A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells

Abstract

Extracted data

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