In VLSI development process simulation is needed to understand the interaction between successive process steps and to give input data for device simulation. The goal of this paper is to sketch the present state of process simulation and to give the reader a feeling of the difficulties but also of what can be gained by using such tools. Due to their importance, most attention will be given to the simulation of ion implantation, diffusion, and oxidation
Since the publication of the first one-dimensional process simulation programs, increasing activitie...
International audienceDopant implantation, followed by spike annealing is one of the main focus area...
Development and optimization of electronic devices in industrial and academic environments would har...
During the last few years, process simulation has become a valuable tool for the optimization of sem...
Process simulation has shown to be an important tool for the development in the fields of ULSI and p...
In contrast to the early times of simulation where the tools were dedicated either to the simulation...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
Our user oriented process simulation program called APT (Advenced Program for Tecnhology) has been i...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
A two dimensional process simulator-MO.BI.DI.C- has been developed. The program can simulate ion imp...
The increasing complexity of the demands in device- and particularly process simulation calls for si...
The Semiconductor Industry Association (SIA) projects that the semiconductor chips used in personal ...
Continuum based integrated circuit process modeling is the dominant tool used to investigate and und...
Simulation of diffusion processes during front-end silicon process steps needs to address a variety ...
Strategy and Expectations: For the class project, I decided to build a model that would approximate ...
Since the publication of the first one-dimensional process simulation programs, increasing activitie...
International audienceDopant implantation, followed by spike annealing is one of the main focus area...
Development and optimization of electronic devices in industrial and academic environments would har...
During the last few years, process simulation has become a valuable tool for the optimization of sem...
Process simulation has shown to be an important tool for the development in the fields of ULSI and p...
In contrast to the early times of simulation where the tools were dedicated either to the simulation...
Ion implantation is the most important doping technique for VLSI circuits. In this contribution, mod...
Our user oriented process simulation program called APT (Advenced Program for Tecnhology) has been i...
Classical molecular dynamics simulations are used to study damage produced during implantation of se...
A two dimensional process simulator-MO.BI.DI.C- has been developed. The program can simulate ion imp...
The increasing complexity of the demands in device- and particularly process simulation calls for si...
The Semiconductor Industry Association (SIA) projects that the semiconductor chips used in personal ...
Continuum based integrated circuit process modeling is the dominant tool used to investigate and und...
Simulation of diffusion processes during front-end silicon process steps needs to address a variety ...
Strategy and Expectations: For the class project, I decided to build a model that would approximate ...
Since the publication of the first one-dimensional process simulation programs, increasing activitie...
International audienceDopant implantation, followed by spike annealing is one of the main focus area...
Development and optimization of electronic devices in industrial and academic environments would har...
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