The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by using a self-aligning technique exhibit very high cut-off frequencies of fT=28 GHz and fMAX=38 GHz
In this work the authors report results of narrowband amplifiers designed for milliwatt and submilli...
A fully planar self-aligned HBT fabrication process based on selective chemical beam epitaxial (CBE)...
In the last few years the InGaAlAs material system has received increasing interest for application ...
The critical issues for the optimization of the MBE grown layer sequence for the integration of an o...
The preparation and performance of self-aligned single- and dual-gate InGaAs JFETs is discussed. Sin...
Recently, optoelectronic integrated circuits(OEICs) have generated interest for applications in both...
The growth of extremely highly Be-doped (1019-1020 cm-3) InGaAs contact layers for JFET devices by m...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
148 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Described in this thesis are ...
Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining ...
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed a...
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demons...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
The aim of this work is to develop a reliable fabrication process for InP-based optoelectronic devic...
In this paper, we report the development and performance of a complete InP-based DHBT manufacturable...
In this work the authors report results of narrowband amplifiers designed for milliwatt and submilli...
A fully planar self-aligned HBT fabrication process based on selective chemical beam epitaxial (CBE)...
In the last few years the InGaAlAs material system has received increasing interest for application ...
The critical issues for the optimization of the MBE grown layer sequence for the integration of an o...
The preparation and performance of self-aligned single- and dual-gate InGaAs JFETs is discussed. Sin...
Recently, optoelectronic integrated circuits(OEICs) have generated interest for applications in both...
The growth of extremely highly Be-doped (1019-1020 cm-3) InGaAs contact layers for JFET devices by m...
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signa...
148 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Described in this thesis are ...
Using molecular beam epitaxy (MBE) and lattice engineering techniques, the feasibility of combining ...
A refractory self-aligned gate fabrication process for gallium arsenide MESFETs has been developed a...
InP-based heterostructure field effect transistors (HFETs) have, over the past several years, demons...
The improvement of high speed and high power performance of self-aligned GaInP/GaAs Heterojunction B...
The aim of this work is to develop a reliable fabrication process for InP-based optoelectronic devic...
In this paper, we report the development and performance of a complete InP-based DHBT manufacturable...
In this work the authors report results of narrowband amplifiers designed for milliwatt and submilli...
A fully planar self-aligned HBT fabrication process based on selective chemical beam epitaxial (CBE)...
In the last few years the InGaAlAs material system has received increasing interest for application ...
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