An 8.2 GHz bandwidth monolithic optoelectronic receiver consisting of an MSM photodiode, a transimpedance amplifier, and a 50 omega output buffer has been fabricated using an enhancement/depletion 0.5 mym recessed-gate AlGaAs/GaAs HEMT process. Successful operation at data rates up to 10 Gbit/s has been demonstrated
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...
An OEIC composed of one MSM-photodetector and 750 GaAs QW-HEMTs of 0.3 gm gatelength has been realiz...
A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifier has b...
A 10 Gibt/s monolithic integrated optoelectronic receiver has been fabricated with a metalsemiconduc...
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode a...
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photod...
The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and A...
A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has be...
A novel optoelectronic receiver chip for a data rate of 2.5Gbit/s has been developed and tested. It ...
A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...
A monolithic integrated optoelectronic receiver for a wavelength of 1.55 mu m consisting of a GaInAs...
The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...
For the first time, monolithic optoelectronic receivers for a wavelength of 1.3 micrometer have been...
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has ...
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...
An OEIC composed of one MSM-photodetector and 750 GaAs QW-HEMTs of 0.3 gm gatelength has been realiz...
A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifier has b...
A 10 Gibt/s monolithic integrated optoelectronic receiver has been fabricated with a metalsemiconduc...
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode a...
A 0.85 mu m wavelength monolithic integrated optoelectronic receiver consisting of a GaAs MSM photod...
The first 1.3 mym monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and A...
A monolithic optoelectronic receiver consisting of an MSM photodiode and a two-stage amplifer has be...
A novel optoelectronic receiver chip for a data rate of 2.5Gbit/s has been developed and tested. It ...
A photoreceiver based on a metal-semiconductor-metal (MSM) photodiode and AlGaAs/GaAs HEMTs is prese...
A monolithic integrated optoelectronic receiver for a wavelength of 1.55 mu m consisting of a GaInAs...
The first 20 Gbit/s 1.3-1.55 mu m wavelength monolithic integrated photoreceiver grown on GaAs subst...
For the first time, monolithic optoelectronic receivers for a wavelength of 1.3 micrometer have been...
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has ...
The first 20Gbit/s 1.3-1.55mu m wavelength monolithic integrated photoreceiver grown on GaAs substra...
A novel monolithically integrated photoreceiver for 10Gbit/s long-haul optoelectronic transmission s...
An OEIC composed of one MSM-photodetector and 750 GaAs QW-HEMTs of 0.3 gm gatelength has been realiz...