A high speed 2:1 multiplexer circuit in source coupled FET logic has been developed and fabricated using a recessed gate process for enhancement and depletion transistors with 0.3Mym gate length. First results show a data rate of over 20 Gbit/s at 5 V supply voltage and 250 mW power consumption. The output voltage swing is adjustable between 0.3 V and 0.8 V for a 50 Ohm load. The output level can be varied between plus1 V an minus1 V. Comparison between simulation and measurement shows very good agreement
A data decision and a static frequency divider in source coupled FET logic with a supply voltage of ...
An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGa...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed ga...
A 1:4 demultiplexer circuit has been developed and fabricated using a recessed gate process for enha...
A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs qua...
GaAs Two-Phase Dynamic FET Logic (TDFL) gates are used in the design of a high-speed, low-power 8-bi...
For the implementation of high-complexity circuits operating at high speed, low-power circuits are e...
A monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quant...
High speed MSI GaAs I. C multiplexers operating up to a 1.9 Gbit/s bit rate have been designed and f...
In today’s era low power dissipation, high speed and area efficient design has become one of the foc...
A 4:1 Time Division Multiplexer(MUX) had been designed in using GaAs Cource Coupled FET Logic (SCFL)...
To increase performace of GaAs LSI digital circuits, a 0,5 mym recessed gate process has been develo...
Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2...
A data decision and a static frequency divider in source coupled FET logic with a supply voltage of ...
An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGa...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...
A set of ICs has been developed for high-speed data links at data rates above 10 Gbit/s. A recessed ...
An ultrahigh speed 4 bit demultiplexer circuit has been developed and fabricated using a recessed ga...
A 1:4 demultiplexer circuit has been developed and fabricated using a recessed gate process for enha...
A monolithically integrated 2 : 1 multiplexer and laser diode driver was developed, using AlGaAs qua...
GaAs Two-Phase Dynamic FET Logic (TDFL) gates are used in the design of a high-speed, low-power 8-bi...
For the implementation of high-complexity circuits operating at high speed, low-power circuits are e...
A monolithically integrated 2:1 multiplexer and laser diode driver was developed, using AlGaAs quant...
High speed MSI GaAs I. C multiplexers operating up to a 1.9 Gbit/s bit rate have been designed and f...
In today’s era low power dissipation, high speed and area efficient design has become one of the foc...
A 4:1 Time Division Multiplexer(MUX) had been designed in using GaAs Cource Coupled FET Logic (SCFL)...
To increase performace of GaAs LSI digital circuits, a 0,5 mym recessed gate process has been develo...
Two monolithic integrated transmitter circuits of a modulator driver and a modulator driver with a 2...
A data decision and a static frequency divider in source coupled FET logic with a supply voltage of ...
An integrated laser diode driver was realised using enhancement/depletion 0.3 Mym recessed-gate AlGa...
Using our 0.2 mu m AlGaAs/GaAs/AlGaAs quantum well HEMT technology, we have designed a chip set for ...