Transistors with transit frequencies beyond 100 GHz, demonstration of quantum devices, development of high frequency ICs for satellite system, collision warning radar for automobiles and microwave landing systems, development of high speed ICs for supercomputers and real time image processing as well as for optical data transmission at data rates byond 10 Gbit per second in local area networks. These were the goals of an ambitious five year programme, GaAs Electronics, funded by the Federal Ministry of Research and Technology (BMFT) in Germany
A DARPA-funded project at the University of Michigan has as a goal the development of technologies a...
AbstractIt is timely to overview the prospective status of digital GaAs ICs now that judgement has f...
Semiconductors have fueled developments in telecommunications, computers, medical services, warfare ...
AbstractWith convincing solutions to realize key components of both mobile communication and mm wave...
A technology based on GaAs MESFET and on GaAs heterobipolar transistors (HBT) was developed for mono...
AbstractA significant part of the European Microwave week held in Munich last October was the event ...
AbstractWhat is claimed to be the industry’s first 90W c-band GaAs field effect transistor (GaAs FET...
Within the scope of the project a complete chip set [1] for optoelectronic 40 Gbit/s ETDM data trans...
The project 'GaAs Power Modules for Communication Systems in the Frequency Range 30-50 GHz' is embed...
The Fraunhofer Institute for Applied Solid State Physics (IAF) in Freiburg, Germany, has built up a ...
92 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.Speed and gain measurements ar...
This study is embedded in the research program 'III-V-Electronics, Integrated Circuits for Highest S...
AbstractThe current strength of the gallium arsenide integrated circuit (GaAs IC) market, together w...
The technology towards a stable 0.5 #mu#m GaAs-MESFET process has been developed and applied to diff...
AbstractDespite any slowdown the GaAs sector, the 2001 GaAs MANTECH International Conference on Comp...
A DARPA-funded project at the University of Michigan has as a goal the development of technologies a...
AbstractIt is timely to overview the prospective status of digital GaAs ICs now that judgement has f...
Semiconductors have fueled developments in telecommunications, computers, medical services, warfare ...
AbstractWith convincing solutions to realize key components of both mobile communication and mm wave...
A technology based on GaAs MESFET and on GaAs heterobipolar transistors (HBT) was developed for mono...
AbstractA significant part of the European Microwave week held in Munich last October was the event ...
AbstractWhat is claimed to be the industry’s first 90W c-band GaAs field effect transistor (GaAs FET...
Within the scope of the project a complete chip set [1] for optoelectronic 40 Gbit/s ETDM data trans...
The project 'GaAs Power Modules for Communication Systems in the Frequency Range 30-50 GHz' is embed...
The Fraunhofer Institute for Applied Solid State Physics (IAF) in Freiburg, Germany, has built up a ...
92 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.Speed and gain measurements ar...
This study is embedded in the research program 'III-V-Electronics, Integrated Circuits for Highest S...
AbstractThe current strength of the gallium arsenide integrated circuit (GaAs IC) market, together w...
The technology towards a stable 0.5 #mu#m GaAs-MESFET process has been developed and applied to diff...
AbstractDespite any slowdown the GaAs sector, the 2001 GaAs MANTECH International Conference on Comp...
A DARPA-funded project at the University of Michigan has as a goal the development of technologies a...
AbstractIt is timely to overview the prospective status of digital GaAs ICs now that judgement has f...
Semiconductors have fueled developments in telecommunications, computers, medical services, warfare ...