Thermal degradation is identified as the origin for a variety of defects in epitaxial layers. The consequences of these defects are more critical than those of dislocations. It turns out that thermal degradation affects the layer quality more than dislocations
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostr...
The lateral distribution of dislocations and nonradiative recombination centers in buik LEC GaAs is ...
Thermal degradation is examined in a development stage in which local damage in the crystal lattice ...
Thermal degradation in InP has been regarded to be equivalent to surface deformation. By means of lu...
The influence of intermittent growth procedures on dislocation densities in iso-epitaxial layers, gr...
This report discusses the following topics: strained layer defects; the structural and electronic ch...
The formation of misfit dislocation was studied in GaAs homoepitaxiallayers on the substrates contai...
The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of eit...
It is demonstrated that relaxation of GaAs/InxGa1–xAs/GaAs strained-layer heterostructures can be br...
The mechanisms of misfit dislocation nucleation in strained epitaxial layers are not well understood...
An apparent defect suppression effect has been observed in InP through an investigation of deep leve...
Thick (∼3 μm) films of InxGa1−xAs grown on GaAs(100) substrates, across the whole composition range,...
We examined the role of substrate quality on the epitaxial layer structure and performance of pseudo...
We investigated InGaAs layers with InGaAs graded layers on GaAs layers that had been grown on Si sub...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostr...
The lateral distribution of dislocations and nonradiative recombination centers in buik LEC GaAs is ...
Thermal degradation is examined in a development stage in which local damage in the crystal lattice ...
Thermal degradation in InP has been regarded to be equivalent to surface deformation. By means of lu...
The influence of intermittent growth procedures on dislocation densities in iso-epitaxial layers, gr...
This report discusses the following topics: strained layer defects; the structural and electronic ch...
The formation of misfit dislocation was studied in GaAs homoepitaxiallayers on the substrates contai...
The defect structure in InP, either undoped or n-type, implanted with 2 MeV Fe ions to a dose of eit...
It is demonstrated that relaxation of GaAs/InxGa1–xAs/GaAs strained-layer heterostructures can be br...
The mechanisms of misfit dislocation nucleation in strained epitaxial layers are not well understood...
An apparent defect suppression effect has been observed in InP through an investigation of deep leve...
Thick (∼3 μm) films of InxGa1−xAs grown on GaAs(100) substrates, across the whole composition range,...
We examined the role of substrate quality on the epitaxial layer structure and performance of pseudo...
We investigated InGaAs layers with InGaAs graded layers on GaAs layers that had been grown on Si sub...
Our understanding of the causal relationship between material parameters and GaAs FET threshold volt...
The defects in InP epitaxial structures (containing in part Pt nanoparticles) and SiGe/Si heterostr...
The lateral distribution of dislocations and nonradiative recombination centers in buik LEC GaAs is ...