The advances towards high-quality dry etching techniques for InP-based materials are reviewed, including recent results on process induced damage. Methods of in situ etch depth control are discussed, and examples of devices advantageously fabricated by dry etching techniques are presented
This work mainly focuses on the post-etch treatment (PET) in dielectric etch processes from contact ...
In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifica...
We present a new chlorine-free dry etching process which was used to successfully etch indium antimo...
The paper argues the superiority of the chemical dry-etching process over wet processes for the prod...
AbstractIn Issue 5, 2000 we looked at the technical and business trends in etch processes for manufa...
A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process result...
We report on the room temperature dry etching of InP by inductively coupled plasma (ICP) using Cl2/C...
To meet the needs of nanometer scale device fabrication, dry etch technology has been developed. The...
Dry etching of InP using a C12/Ar plasma generated by an electron cyclotron resonance source has bee...
This paper deals with the development of an etch recipe for the etching of InP by Reactive ion etchi...
Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etch...
Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in ...
This book is a must-have reference to dry etching technology for semiconductors, which will enable e...
Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etch...
This work mainly focuses on the post-etch treatment (PET) in dielectric etch processes from contact ...
In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifica...
We present a new chlorine-free dry etching process which was used to successfully etch indium antimo...
The paper argues the superiority of the chemical dry-etching process over wet processes for the prod...
AbstractIn Issue 5, 2000 we looked at the technical and business trends in etch processes for manufa...
A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process result...
We report on the room temperature dry etching of InP by inductively coupled plasma (ICP) using Cl2/C...
To meet the needs of nanometer scale device fabrication, dry etch technology has been developed. The...
Dry etching of InP using a C12/Ar plasma generated by an electron cyclotron resonance source has bee...
This paper deals with the development of an etch recipe for the etching of InP by Reactive ion etchi...
Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etch...
Dry etching is an important process for micro- and nanofabrication. Sputtering effects can arise in ...
This book is a must-have reference to dry etching technology for semiconductors, which will enable e...
Chlorine-based inductively coupled plasma etching processes are investigated for the purpose of etch...
This work mainly focuses on the post-etch treatment (PET) in dielectric etch processes from contact ...
In this paper we report some recent progress in 77GHz InP Gunn device process development. Specifica...
We present a new chlorine-free dry etching process which was used to successfully etch indium antimo...
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