Stepper related contributions to the overlay budget, such as alignment accuracy and displacements during pattern replication were investigated. By improving the alignment system, a value of 70 nm (mean+3 sigma) was realized. Displacement errors induced by the stepper mechanism during pattern replication found to be in the range of 35 nm (3 sigma). This value was improved using a wafer chuck with high flatness. Summerizing the results, the total overlay contribution of the stepper (including alignment) is 75 nm (mean+3 sigma
The Perkin Elmer Model 140 was investigated for second level alignment. Using a photolithographic ev...
Abstract: For thick resist implant layers, such as a high voltage P well and a deep N well, systemat...
Epitaxial-grown silicon as the membrane and gold as the absorber material fulfils the requirements o...
The metrology in submicron lilthography is an increasingly difficult task. Especially the control of...
Overlay accuracy is known as one of the most important subjects for ULSI device production. Signific...
Characterization of a GCA 4800 stepper was done in order to assess the system capability for image q...
Lithography is one of the most crucial processes that is used in modern integrated circuit (IC) fabr...
Microlithography is the process of transfer of minute electronic circuit patterns from a template (a...
The possibilities of in-process blue image sensing by using only the implemented darkfield TTL align...
I-line lithography offers the capability to achieve half- micron integrated circuit design rules. Su...
[[abstract]]© 2003 Taylor & Francis - To enhance the resolution and alignment accuracy in semiconduc...
S u m m a r y As modern integrated circuit design heis marched well into the submicron regime, tigli...
[[abstract]]Overlay is one of the key designed rules for producing VLSI devices. In order to have a ...
For the fabrication of ULSI circuits, it is necessary to master sub-half micron design rules which i...
Substrate conformal imprint lithography (SCIL) is an innovative soft lithography method for the tran...
The Perkin Elmer Model 140 was investigated for second level alignment. Using a photolithographic ev...
Abstract: For thick resist implant layers, such as a high voltage P well and a deep N well, systemat...
Epitaxial-grown silicon as the membrane and gold as the absorber material fulfils the requirements o...
The metrology in submicron lilthography is an increasingly difficult task. Especially the control of...
Overlay accuracy is known as one of the most important subjects for ULSI device production. Signific...
Characterization of a GCA 4800 stepper was done in order to assess the system capability for image q...
Lithography is one of the most crucial processes that is used in modern integrated circuit (IC) fabr...
Microlithography is the process of transfer of minute electronic circuit patterns from a template (a...
The possibilities of in-process blue image sensing by using only the implemented darkfield TTL align...
I-line lithography offers the capability to achieve half- micron integrated circuit design rules. Su...
[[abstract]]© 2003 Taylor & Francis - To enhance the resolution and alignment accuracy in semiconduc...
S u m m a r y As modern integrated circuit design heis marched well into the submicron regime, tigli...
[[abstract]]Overlay is one of the key designed rules for producing VLSI devices. In order to have a ...
For the fabrication of ULSI circuits, it is necessary to master sub-half micron design rules which i...
Substrate conformal imprint lithography (SCIL) is an innovative soft lithography method for the tran...
The Perkin Elmer Model 140 was investigated for second level alignment. Using a photolithographic ev...
Abstract: For thick resist implant layers, such as a high voltage P well and a deep N well, systemat...
Epitaxial-grown silicon as the membrane and gold as the absorber material fulfils the requirements o...