Using angle resolved laser photoemission spectroscopy we have measured the transient narrowing of the surface state band gap on the cleaved Ge(111) 2 x 1 surface. The reconstruction of this surface results in the formation of one- dimensional pi bonded chains of atoms which give rise to bonding and antibonding bands whose energy/wave vector dispersions are one-dimensional as well. Photoexcitation of this surface produces a transient pi population which, in turn, leads to an observed narrowing of the surface band gap. We have investigated this renormalization as a function of surface carrier density and laser excitation fluence
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
Ultrafast angle-resolved two photon photoemission was used to study the dynamics and interfacial ban...
The Ag/Ge(111) surface together with Ag/Si(111) constitutes a set of surfaces that is ideally suit...
Angle-resolved laser-photoemission spectroscopy has been used to study the ultrafast-electron scatte...
The dispersion of quasi-one-dimensional dangling-bond electrons in pi-bonded chains at the Si(111)-2...
Low-temperature scanning tunneling microscopy is used to study the 2×1 reconstruction of cleaved Ge(...
We have investigated the close packed 3 root 3 x 3 root 3R30 degrees-C-60 monolayer on the Ge(111) s...
The dispersion of quasi-one-dimensional dangling-bond electrons in π-bonded chains at the Si(1 1 1)-...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
Optical absorption of a cleaved surface of germanium shows a band at energies smaller than the gap, ...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
© 2015, Pleiades Publishing, Inc. We numerically model the Ge(111)-(2 × 1) surface electronic proper...
The degree of 1D character of surface chains at group IV (111)-2 × 1 reconstructed surfaces is estab...
Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit...
The surface band gap of the Ge(111)c(2×8) surface at low temperature is determined on the basis of s...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
Ultrafast angle-resolved two photon photoemission was used to study the dynamics and interfacial ban...
The Ag/Ge(111) surface together with Ag/Si(111) constitutes a set of surfaces that is ideally suit...
Angle-resolved laser-photoemission spectroscopy has been used to study the ultrafast-electron scatte...
The dispersion of quasi-one-dimensional dangling-bond electrons in pi-bonded chains at the Si(111)-2...
Low-temperature scanning tunneling microscopy is used to study the 2×1 reconstruction of cleaved Ge(...
We have investigated the close packed 3 root 3 x 3 root 3R30 degrees-C-60 monolayer on the Ge(111) s...
The dispersion of quasi-one-dimensional dangling-bond electrons in π-bonded chains at the Si(1 1 1)-...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
Optical absorption of a cleaved surface of germanium shows a band at energies smaller than the gap, ...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
© 2015, Pleiades Publishing, Inc. We numerically model the Ge(111)-(2 × 1) surface electronic proper...
The degree of 1D character of surface chains at group IV (111)-2 × 1 reconstructed surfaces is estab...
Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit...
The surface band gap of the Ge(111)c(2×8) surface at low temperature is determined on the basis of s...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
Ultrafast angle-resolved two photon photoemission was used to study the dynamics and interfacial ban...
The Ag/Ge(111) surface together with Ag/Si(111) constitutes a set of surfaces that is ideally suit...