Add to ORKGA process for the surface treatment of photosensitive compound semiconductors comprises an electrolytic etching operation during which the compound semiconductor acting as the anode and an inert cathode are immersed in a chemically inert high-viscosity solvent. A strong alkaline solution having a pH of more than 10 is added to the solvent. A current o
The photoelectrochemical oxidation of(i00), (I 11), and (i 11) n-InP and n-GaAs in several cidic sol...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
It was in a solid-state physics seminar at the University of Stuttgart in 1956 that I heard a report...
The electrode potential of germanium or silicon in a chemical etching solu-tion is a function of sol...
DE 19857064 A UPAB: 20000823 NOVELTY - Passivation of the surface of a semiconductor material, optio...
DE 10352423 B UPAB: 20050124 NOVELTY - Process for reducing the reflection on semiconductor surfaces...
Photoelectrochemistry may be performed on semiconductor wafers without application of metal contacts...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
A short report is given on the technique of photoelectrochemical etching. The basic principles and t...
[[abstract]]In accordance with the invention, a contaminated III-V semiconductor surface is cleaned ...
The work covers the elementary semiconductors and binary semiconductor compounds of A*993B*995 type ...
A short report is given on the technique of photoelectrochemical etching. The basic principles and t...
The photoelectrochemical oxidation and dissolution of silicon (Si) is performed in the absence of wa...
The description refers to an anisotropic etching process for the etching of semiconducting materials...
DE 102006013517 A1 UPAB: 20071108 NOVELTY - The method involves providing a carrier (5) with a surfa...
The photoelectrochemical oxidation of(i00), (I 11), and (i 11) n-InP and n-GaAs in several cidic sol...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
It was in a solid-state physics seminar at the University of Stuttgart in 1956 that I heard a report...
The electrode potential of germanium or silicon in a chemical etching solu-tion is a function of sol...
DE 19857064 A UPAB: 20000823 NOVELTY - Passivation of the surface of a semiconductor material, optio...
DE 10352423 B UPAB: 20050124 NOVELTY - Process for reducing the reflection on semiconductor surfaces...
Photoelectrochemistry may be performed on semiconductor wafers without application of metal contacts...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
A short report is given on the technique of photoelectrochemical etching. The basic principles and t...
[[abstract]]In accordance with the invention, a contaminated III-V semiconductor surface is cleaned ...
The work covers the elementary semiconductors and binary semiconductor compounds of A*993B*995 type ...
A short report is given on the technique of photoelectrochemical etching. The basic principles and t...
The photoelectrochemical oxidation and dissolution of silicon (Si) is performed in the absence of wa...
The description refers to an anisotropic etching process for the etching of semiconducting materials...
DE 102006013517 A1 UPAB: 20071108 NOVELTY - The method involves providing a carrier (5) with a surfa...
The photoelectrochemical oxidation of(i00), (I 11), and (i 11) n-InP and n-GaAs in several cidic sol...
Metal-semiconductor junctions are important elements in semiconductor devices. An ohmic contact can ...
It was in a solid-state physics seminar at the University of Stuttgart in 1956 that I heard a report...