In this response to a comment of K. Maser, the basic assumptions of pair diffusion theory and Maser's non- Fickian diffusion theory are reviewed in detail. It is concluded that both theories can be justified on the same basic mechanism with different assumptions on longranging interaction between vacancy and dopant. Experimental evidence was found to speak in favor of the pair diffusion theory
The authors of the above paper call into question recent evidence on the properties of self-intersti...
A critique of the instantaneous normal mode (INM) theory of diffusion by Gezelter, Rabani, and Berne...
Point defects in metals were first introduced to explain diffusional phenomena, and the success of t...
In this work, we describe a general model for dopant diffusion via dopant-defect pairs assuming loca...
The complete set of the four macroscopic transport coefficients describing the coupled diffusion of ...
In a recent paper [Phys. Rev. B 50, 3477 (1994)], P. Fratzl and O. Penrose present the results of th...
A new approach is used for the calculation of transport coefficients for dopants and vacancies from ...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
Silicon technology is based on doping with atoms from the groups III and V of the periodic system, w...
Boron was implanted into silicon at a wafer temperature of 950degreeC. The resulting boron profile s...
The transient enhanced diffusion of dopants in silicon is known to be governed by the interaction of...
A phenomenological theory of the vacancy jump is presented. It is shown on one hand that diffusion o...
A Comment on the Letter by P. B. Sunil Kumar and Madan Rao, Phys. Rev. Lett. 77, 1067 (1996). The au...
Following the recent proposal made by Bouttier et al [Phys. Rev. E 76, 041140 (2007)], we study anal...
Starting from Fick’s train of thought, which led to the formulation of his law governing diffusion i...
The authors of the above paper call into question recent evidence on the properties of self-intersti...
A critique of the instantaneous normal mode (INM) theory of diffusion by Gezelter, Rabani, and Berne...
Point defects in metals were first introduced to explain diffusional phenomena, and the success of t...
In this work, we describe a general model for dopant diffusion via dopant-defect pairs assuming loca...
The complete set of the four macroscopic transport coefficients describing the coupled diffusion of ...
In a recent paper [Phys. Rev. B 50, 3477 (1994)], P. Fratzl and O. Penrose present the results of th...
A new approach is used for the calculation of transport coefficients for dopants and vacancies from ...
In this paper, we develop and analyze models for the coupled iffusion of dopants and point defects, ...
Silicon technology is based on doping with atoms from the groups III and V of the periodic system, w...
Boron was implanted into silicon at a wafer temperature of 950degreeC. The resulting boron profile s...
The transient enhanced diffusion of dopants in silicon is known to be governed by the interaction of...
A phenomenological theory of the vacancy jump is presented. It is shown on one hand that diffusion o...
A Comment on the Letter by P. B. Sunil Kumar and Madan Rao, Phys. Rev. Lett. 77, 1067 (1996). The au...
Following the recent proposal made by Bouttier et al [Phys. Rev. E 76, 041140 (2007)], we study anal...
Starting from Fick’s train of thought, which led to the formulation of his law governing diffusion i...
The authors of the above paper call into question recent evidence on the properties of self-intersti...
A critique of the instantaneous normal mode (INM) theory of diffusion by Gezelter, Rabani, and Berne...
Point defects in metals were first introduced to explain diffusional phenomena, and the success of t...