Highly oriented diamond films have been deposited on mirror-polished single crystalline (100) silicon by microwave plasma CVD. The crystallites are grown with their (001) planes parallel to the silicon (001) plane and their (110) directions parallel to silicon (110), as is shown by scanning electron microscopy (SEM) and x-ray diffraction analysis
Oriented diamond films have been grown on Si(001) and Si(111) substrates by microwave plasma chemica...
In the present paper two methods are presented allowing the preparation of diamond films, in which t...
Near perfect diamond island structures on Si(lll) are grown by microwave PECVD at low methane concen...
Epitaxial (001) diamond films were grown on mirror- polished monocrystalline (001) silicon substrate...
Heteroepitaxial (001)-oriented diamond films with considerably increased lateral grain size and stro...
This paper reports the progresses made recently on the nucleation and growth of high-quality, [001]-...
[[abstract]]Heteroepitaxial diamond films were successfully nucleated and deposited on 1-inch diamet...
The decisive role of ion bombardment, due to the substrate bias for epitaxial diamond nucleation by ...
Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-en...
A method allowing heteroepitaxial CVD growth of diamond on single-crystalline silicon substrates has...
The coalescence of diamond grains grown by microwave plasma chemical vapor deposition was observed a...
Fibre textured as well as heteroepitaxially textured diamond films have been grown by microwave plas...
Heteroepitaxial nucleation of diamond from the gas phase can be achieved on silicon substrates and o...
After the successful controlled heteroepitaxial nucleation of diamond on 3C‐SiC epitaxial films and ...
By using the straight hot filament chemical vapor deposition method with one falt horizontal filamen...
Oriented diamond films have been grown on Si(001) and Si(111) substrates by microwave plasma chemica...
In the present paper two methods are presented allowing the preparation of diamond films, in which t...
Near perfect diamond island structures on Si(lll) are grown by microwave PECVD at low methane concen...
Epitaxial (001) diamond films were grown on mirror- polished monocrystalline (001) silicon substrate...
Heteroepitaxial (001)-oriented diamond films with considerably increased lateral grain size and stro...
This paper reports the progresses made recently on the nucleation and growth of high-quality, [001]-...
[[abstract]]Heteroepitaxial diamond films were successfully nucleated and deposited on 1-inch diamet...
The decisive role of ion bombardment, due to the substrate bias for epitaxial diamond nucleation by ...
Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-en...
A method allowing heteroepitaxial CVD growth of diamond on single-crystalline silicon substrates has...
The coalescence of diamond grains grown by microwave plasma chemical vapor deposition was observed a...
Fibre textured as well as heteroepitaxially textured diamond films have been grown by microwave plas...
Heteroepitaxial nucleation of diamond from the gas phase can be achieved on silicon substrates and o...
After the successful controlled heteroepitaxial nucleation of diamond on 3C‐SiC epitaxial films and ...
By using the straight hot filament chemical vapor deposition method with one falt horizontal filamen...
Oriented diamond films have been grown on Si(001) and Si(111) substrates by microwave plasma chemica...
In the present paper two methods are presented allowing the preparation of diamond films, in which t...
Near perfect diamond island structures on Si(lll) are grown by microwave PECVD at low methane concen...
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