High speed selfaligned GaInP/GaAs HBBTs.

High speed selfaligned Gasub0.5Insub0.5P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm carbon doped base layer (p is equal to 6.5 x 10high19 cmhighminus3) and a 20 nm undoped GaInP barrier have been fabricated. The devices show maximum small signal current gains around 30, independent of emitter size. A current gain cutoff frequency of fsubT is equal to 95 GHz and power gain cutoff frequency of fsubmax is equal to 110 GHz are reported for 1.5 x 10 My square meter and 2 x 1.5 x 10 My square meter devices, respectively. These results represent the best microwave performance yet reported for Gasub0.5Insub0.5P/GaAs based HBTs