Integrated laser-diode voltage driver for 20-Gb/s optical systems using 0.3-mym gate length quantum-well HEMT's.

Wang, Z.-G.
Berroth, M.
Nowotny, U.
Ludwig, M.
Hofmann, P.
Hülsmann, A.
Köhler, K.
Raynor, B.
Schneider, J.

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Publication date

January 1993

DOI

10.1109/4.222183

ISSN

0018-9200

Citation count (estimate)

Abstract

An integrated laser-diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quantum-well high electron mobility transistors (QW-HEMT's) with gate lengths of 0.3 mym has been developed. Its large signal bandwidth is 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gb/s show an opening similar to that of the input signal. Supporting material is given indicating that the LDVD might operate at bit rates up to 20 Gb/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds 40-mA modulation current for a laser diode with 20-Ohm dynamic resistance. The power consumption is less than 500 mW