MODFET technology optimization for MMICs using statistical microwave characterization

77 GHz LNAs and TWAs operating from DC to 80 GHz were fabricated successfully (1),(2) using a highly reproducible MODFET technology with mushroom gates of 0.16 mym length. Technology development and optimization were carried out using DC and RF wafer mapping. A high yield high performance transistor process required for 70 to 80 GHz applications was therefore established