P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
- Ralston, J.D.
- Weisser, S.
- Esquivias, I.
- Schönfelder, A.
- Larkins, E.C.
- Rosenzweig, J.
- Tasker, P.J.
- Maier, M.
- Fleissner, J.
DOIAbstract
We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviour in GaAs-based strained multiple quantum well lasers. By adding 5x10high18-2x10high19 cmhigh-3 beryllium doping to the active region of In0.35Ga0.65As/GaAs strained multiple quantum well lasers (4 QW's), we are able to demonstrate both very efficient high-speed modulation (20 GHz at a DC bias current of 50 mA) and the first semiconductor lasers to achieve a direct modulation bandwidth of 30 GHz under DC bias (heat-sink temperature is equal 25 degree C)
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