Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon

Modeling high concentration boron diffusion with dynamic clustering: Influence of the initial conditions

B. Baccus

January 1993

Boron diffusion and activation at high concentrations are key problems in the formation of shallow P...

Effects of donor concentration on transient enhanced diffusion of boron in silicon

S. Solmi
Bersani, Massimo

January 2000

The effects of substrate donor concentration on transient enhanced diffusion (TED) of boron implante...

Simulation of plasma assisted doping of silicon

Velichko, O. I.
Dobrushkin, V. A.
Tsurko, V. A.
Senko, N. A.

January 2001

The model of plasma assisted doping of silicon has been developed and calculations of the plasma imm...

Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon

Jäger, H.-U.

January 1995

The time evolution of the transient enhanced diffusion and of the electrical activation of boron in ...

An explanation of transient enhanced diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing

Jäger, H.-U.

January 1992

The time evolution of dopant diffusion and electrical activation after boron ion implantation into c...

An explanation of transient-enhanced diffusion and electrical activation of boron in crystalline silicon during postimplantation annealing

Jäger, H.-U.

January 1993

The time evolution of the transiently enhanced diffusion and of the electrical activation of boron i...

TCAD Driven CAD A Journal for Process and Device Engineers

June 2015

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...

On the modeling of transient diffusion and activation of boron during post-implantation annealing

Pichler, P.
Ortiz, C.J.
Colombeau, B.
Cowern, N.E.B.
Lampin, E.
Claverie, A.
Cristiano, F.
Lerch, W.
Paul, S.

January 2004

A quantitative description of the transient diffusion and activation of boron during post-implantati...

Diffusion and activation of dopants in silicon and advanced silicon-based materials

Pichler, P.
Ortiz, C.J.
Colombeau, B.
Cowern, N.E.B.
Lampin, E.
Uppal, S.
Karunaratne, M.S.A.
Bonar, J.M.
Willoughby, A.F.W.
Claverie, A.
Cristiano, F.
Lerch, W.
Paul, S.

January 2006

A quantitative description of the transient diffusion and activation of boron during post-implantati...

Controlling Boron Diffusion during Rapid Thermal Annealing with CoImplantation by Amphoteric Impurity Atoms

Makarevich, Yu. V.
Komarov, F. F.
Komarov, A. F.
Mironov, A. M.
Zayats, G. M.
Miskevich, S. A.

January 2012

A model for simulating the rapid thermal annealing of silicon structures implanted with boron and ca...

Change in the Microscopic Diffusion Mechanisms of Boron Implanted into Silicon with Increase in the Annealing Temperature

Velichko, O. I.
Hundorina, A. A.

January 2011

A two stream model of boron diffusion in silicon has been developed. The model is intended for simul...

Process-induced diffusion phenomena in advanced CMOS technologies

Pichler, P.
Burenkov, A.
Lerch, W.
Lorenz, J.
Paul, S.
Niess, J.
Nényei, Z.
Gelpey, J.
McCoy, S.
Windl, W.
Giles, L.F.

January 2006

The continuous scaling of electron devices places strong demands on device design and simulation. Th...

Modeling of TED of boron in the underlying silicon layer due to boron implantation

Sabki, S N
Hashim, M R
Aziz, A A
Ashburn, P

January 2002

Ion implantation's selectivity plays a very important role in forming the active device region of bi...

Atomic scale modeling of boron transient diffusion in silicon

Caturla, M. J.
Diaz de la Rubia, T.
Foad, M.
Giles, M.
Johnson, M. D.
Law, M.
Lilak, A.

June 1998

We presents results from a predictive atomic level simulation of Boron diffusion in Silicon under a ...

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
Buca, D.
Trinkaus, H.
Goryll, M.
Mantl, S.
Knoch, J.
Breuer, U.
Skorupa, W.
Ghyselen, B.

January 2008

We present experimental results on the activation and diffusion behaviors of boron in silicon-on-ins...

Modeling high concentration boron diffusion with dynamic clustering: Influence of the initial conditions

B. Baccus

January 1993

Boron diffusion and activation at high concentrations are key problems in the formation of shallow P...

Effects of donor concentration on transient enhanced diffusion of boron in silicon

S. Solmi
Bersani, Massimo

January 2000

The effects of substrate donor concentration on transient enhanced diffusion (TED) of boron implante...

Simulation of plasma assisted doping of silicon

Velichko, O. I.
Dobrushkin, V. A.
Tsurko, V. A.
Senko, N. A.

January 2001

The model of plasma assisted doping of silicon has been developed and calculations of the plasma imm...

Point defect-based modeling of diffusion and electrical activation of ion implanted boron in crystalline silicon

Jäger, H.-U.

January 1995

The time evolution of the transient enhanced diffusion and of the electrical activation of boron in ...

An explanation of transient enhanced diffusion and electrical activation of boron in crystalline silicon during post-implantation annealing

Jäger, H.-U.

January 1992

The time evolution of dopant diffusion and electrical activation after boron ion implantation into c...

An explanation of transient-enhanced diffusion and electrical activation of boron in crystalline silicon during postimplantation annealing

Jäger, H.-U.

January 1993

The time evolution of the transiently enhanced diffusion and of the electrical activation of boron i...

TCAD Driven CAD A Journal for Process and Device Engineers

June 2015

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This m...

On the modeling of transient diffusion and activation of boron during post-implantation annealing

Pichler, P.
Ortiz, C.J.
Colombeau, B.
Cowern, N.E.B.
Lampin, E.
Claverie, A.
Cristiano, F.
Lerch, W.
Paul, S.

January 2004

A quantitative description of the transient diffusion and activation of boron during post-implantati...

Diffusion and activation of dopants in silicon and advanced silicon-based materials

Pichler, P.
Ortiz, C.J.
Colombeau, B.
Cowern, N.E.B.
Lampin, E.
Uppal, S.
Karunaratne, M.S.A.
Bonar, J.M.
Willoughby, A.F.W.
Claverie, A.
Cristiano, F.
Lerch, W.
Paul, S.

January 2006

A quantitative description of the transient diffusion and activation of boron during post-implantati...

Controlling Boron Diffusion during Rapid Thermal Annealing with CoImplantation by Amphoteric Impurity Atoms

Makarevich, Yu. V.
Komarov, F. F.
Komarov, A. F.
Mironov, A. M.
Zayats, G. M.
Miskevich, S. A.

January 2012

A model for simulating the rapid thermal annealing of silicon structures implanted with boron and ca...

Change in the Microscopic Diffusion Mechanisms of Boron Implanted into Silicon with Increase in the Annealing Temperature

Velichko, O. I.
Hundorina, A. A.

January 2011

A two stream model of boron diffusion in silicon has been developed. The model is intended for simul...

Process-induced diffusion phenomena in advanced CMOS technologies

Pichler, P.
Burenkov, A.
Lerch, W.
Lorenz, J.
Paul, S.
Niess, J.
Nényei, Z.
Gelpey, J.
McCoy, S.
Windl, W.
Giles, L.F.

January 2006

The continuous scaling of electron devices places strong demands on device design and simulation. Th...

Modeling of TED of boron in the underlying silicon layer due to boron implantation

Sabki, S N
Hashim, M R
Aziz, A A
Ashburn, P

January 2002

Ion implantation's selectivity plays a very important role in forming the active device region of bi...

Atomic scale modeling of boron transient diffusion in silicon

Caturla, M. J.
Diaz de la Rubia, T.
Foad, M.
Giles, M.
Johnson, M. D.
Law, M.
Lilak, A.

June 1998

We presents results from a predictive atomic level simulation of Boron diffusion in Silicon under a ...

Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

Lanzerath, F.
Buca, D.
Trinkaus, H.
Goryll, M.
Mantl, S.
Knoch, J.
Breuer, U.
Skorupa, W.
Ghyselen, B.

January 2008

We present experimental results on the activation and diffusion behaviors of boron in silicon-on-ins...

Modeling high concentration boron diffusion with dynamic clustering: Influence of the initial conditions

B. Baccus

January 1993

Boron diffusion and activation at high concentrations are key problems in the formation of shallow P...

Effects of donor concentration on transient enhanced diffusion of boron in silicon

S. Solmi
Bersani, Massimo

January 2000

The effects of substrate donor concentration on transient enhanced diffusion (TED) of boron implante...

Simulation of plasma assisted doping of silicon

Velichko, O. I.
Dobrushkin, V. A.
Tsurko, V. A.
Senko, N. A.

January 2001

The model of plasma assisted doping of silicon has been developed and calculations of the plasma imm...

Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon

Abstract

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Simulation of high-dose ion implantation-induced transient diffusion and of electrical activation of boron in crystalline silicon

Abstract

Extracted data

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