Verfahren zur Kristallisation duenner Halbleiterschichten auf einem Substratmaterial

In a process for crystallizing thin semiconductor layers on a substrate material, a melt containing a temperature section is produced in the surface layer. The temperature section has an "undercooled" area which is basically symmetrical to its centre. In its lateral dimensions, the temperature area is the same size as the thickness of the melt. The melt in the surface layer of the substrate material is best produced by irradiation by a laser beam in the TEM* vibrational mode. This process is especially suitable for crystallizing monocrystalline silicon areas on SOI substrates (silicon-on insulator)