Add to ORKGBased on in-process defect monitor data and layout related Monte Carlo calculations we predict the yield of IC metal layers and the probability that missing metal defects reduce the IC reliability. the influence of such defects on electromigration failure distributions is investigated by experiments on submicron test structures
Defect density and defect size distributions (DDSDs) are key parameters used in IC yield loss predic...
The reliability of integrated circuits has been of particular interest for the microelectronic indus...
The paper presents the results of research into the statistical characterization of the aging of int...
A procedure for yield prediction and reliability estimation for microlectronic circuit manufacturing...
Spot defects represent the main challenge for enhancement of semiconductor manufacturing yield. As a...
We define and investigate the problem of electromigration faults caused by spot defects during VLSI ...
Functional yield is a term used to describe the percentage of dies on a wafer that fail due to catas...
Functional yield is a term used to describe the percentage of dies on a wafer that are not affected ...
Integrated circuits have evolved from early transistor technology as a result of the increasing reli...
This paper presents an analytical model for projecting the yield loss due to random delay defects fo...
Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a...
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a met...
The semiconductor technology development requires a full understanding of material implications at t...
Abstract. Electromigration (EM) of the interconnects is a key factor in determining the reliability ...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
Defect density and defect size distributions (DDSDs) are key parameters used in IC yield loss predic...
The reliability of integrated circuits has been of particular interest for the microelectronic indus...
The paper presents the results of research into the statistical characterization of the aging of int...
A procedure for yield prediction and reliability estimation for microlectronic circuit manufacturing...
Spot defects represent the main challenge for enhancement of semiconductor manufacturing yield. As a...
We define and investigate the problem of electromigration faults caused by spot defects during VLSI ...
Functional yield is a term used to describe the percentage of dies on a wafer that fail due to catas...
Functional yield is a term used to describe the percentage of dies on a wafer that are not affected ...
Integrated circuits have evolved from early transistor technology as a result of the increasing reli...
This paper presents an analytical model for projecting the yield loss due to random delay defects fo...
Due to the continuing downscaling of the dimensions in VLSI circuits, electromigration is becoming a...
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a met...
The semiconductor technology development requires a full understanding of material implications at t...
Abstract. Electromigration (EM) of the interconnects is a key factor in determining the reliability ...
The electromigration phenomenon has been one of the most intriguing physical problems in the semicon...
Defect density and defect size distributions (DDSDs) are key parameters used in IC yield loss predic...
The reliability of integrated circuits has been of particular interest for the microelectronic indus...
The paper presents the results of research into the statistical characterization of the aging of int...