In this study, the influence of Ge and As ion energy, respectively, on the mixing behavior and the contact properties of the Co-Si system was investigated by Monte-Carlo-simulations, SIMS, RBS, TEM, and electrical measurements. To achieve silicided nhighplus p junctions, 30 nm Co on Si were mixed with (1-5)highstar 10high15 qcmhigh-2 Ge or As ions in the energy-range from 50 to 200 keV. Silicidation was performed in a RTA system at 700 and 1000 degree Celsius. In case of Ge mixing, the nhighplus p junction was formed by As implantation either before or after silicidation. It could be shown that ion-beam mixing with Ge and As ions followed by rapid thermal annealing lead to homogeneous silicidation for all mixing energies and ion species use...
MoSi2 layers were fabricated by ion-beam mixing and subsequent annealing. The mixing was performed b...
In order to obtain thin CoSi2 surface layers, Si(1 1 1) and Si(1 0 0), covered by SiO2 or Si3N4 wi...
Abstract-This work investigates the shallow CoSb contacted junctions formed by BF: and As+ implantat...
In this work, the influence of ion-beam mixing at enhanced substrate temperatures on CoSi2 formation...
In this study, the critical dose for ion-beam mixing of Co and Si with Ge ions which results in homo...
For the application in self-aligned processes, it was supposed that CoSi2 could be superior to TiSi2...
This thesis reports a study of the microstructural and electrical characterization of high quality e...
Diodes with high conductivity Molybdenum-silicide-contacts were fabricated using self-aligned silici...
CoSi$_{2}$ is a favourable candidate for low ohmic interconnects in integrated circuits with high te...
Abstract. Synthesis of swift heavy ion induced metal silicide is a new advancement in materials scie...
Si6-xGex/Si system is expected to play a major role in Si-based advanced microelectronic and optoele...
Si6-xGex/Si system is expected to play a major role in Si-based advanced microelectronic and optoele...
A shallow silicided N+-P or P+-N junction with CoSi2 can be formed by driving the dopants, which are...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
MoSi2 layers were fabricated by ion-beam mixing and subsequent annealing. The mixing was performed b...
In order to obtain thin CoSi2 surface layers, Si(1 1 1) and Si(1 0 0), covered by SiO2 or Si3N4 wi...
Abstract-This work investigates the shallow CoSb contacted junctions formed by BF: and As+ implantat...
In this work, the influence of ion-beam mixing at enhanced substrate temperatures on CoSi2 formation...
In this study, the critical dose for ion-beam mixing of Co and Si with Ge ions which results in homo...
For the application in self-aligned processes, it was supposed that CoSi2 could be superior to TiSi2...
This thesis reports a study of the microstructural and electrical characterization of high quality e...
Diodes with high conductivity Molybdenum-silicide-contacts were fabricated using self-aligned silici...
CoSi$_{2}$ is a favourable candidate for low ohmic interconnects in integrated circuits with high te...
Abstract. Synthesis of swift heavy ion induced metal silicide is a new advancement in materials scie...
Si6-xGex/Si system is expected to play a major role in Si-based advanced microelectronic and optoele...
Si6-xGex/Si system is expected to play a major role in Si-based advanced microelectronic and optoele...
A shallow silicided N+-P or P+-N junction with CoSi2 can be formed by driving the dopants, which are...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and si...
MoSi2 layers were fabricated by ion-beam mixing and subsequent annealing. The mixing was performed b...
In order to obtain thin CoSi2 surface layers, Si(1 1 1) and Si(1 0 0), covered by SiO2 or Si3N4 wi...
Abstract-This work investigates the shallow CoSb contacted junctions formed by BF: and As+ implantat...