We have studied the transport and tunnelling of electrons in a wedge-shaped GaAs field emitter by means of the Monte Carlo Particle model. This approach has been chosen because it yields a self-consistent solution of Boltzmanns transport and Poisson's field equation in space and time, as well as providing a profound first principles physics insight into details of electron dynamics. We found that most of the emission takes place from the side of the emitter near the top because the spherical top itself is too small to contain a significant number of particles. The hottest electrons tend to reside in the highest conduction band minima but rarely exceed one electronvolt above them
In order to simulate electron transport in the channel of a field-effect transistor in the strong ac...
179 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.In this thesis, the high fiel...
Electron transport in GaAs samples at 77 K for lengths of 0. 1, 0.2 and 0.5 µm is analysed by using ...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
An inverse heterojunction field-effect transistor has been simulated by means of the Monte Carlo par...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
168 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983.The study of high field trans...
This paper deals with the electron transport and heat generation in a Resonant Tunneling Diode semic...
168 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983.The study of high field trans...
This paper deals with the electron transport and heat generation in a Resonant Tunneling Diode semic...
A self-consistent Monte Carlo particle model aimed at a profound physical understanding of small sem...
In order to simulate electron transport in the channel of a field-effect transistor in the strong ac...
179 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.In this thesis, the high fiel...
Electron transport in GaAs samples at 77 K for lengths of 0. 1, 0.2 and 0.5 µm is analysed by using ...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
An inverse heterojunction field-effect transistor has been simulated by means of the Monte Carlo par...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
The Monte Carlo method is a very general mathematical tool for the solution of a large variety of pr...
In this thesis, the transport of electrons in silicon devices is studied numerically by solving the ...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
138 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.In this thesis, electronic tr...
168 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983.The study of high field trans...
This paper deals with the electron transport and heat generation in a Resonant Tunneling Diode semic...
168 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1983.The study of high field trans...
This paper deals with the electron transport and heat generation in a Resonant Tunneling Diode semic...
A self-consistent Monte Carlo particle model aimed at a profound physical understanding of small sem...
In order to simulate electron transport in the channel of a field-effect transistor in the strong ac...
179 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1984.In this thesis, the high fiel...
Electron transport in GaAs samples at 77 K for lengths of 0. 1, 0.2 and 0.5 µm is analysed by using ...