The optical absorption of short-period semiconductor superlattices with an electric field perpendicular to the layer plane is studied. The applied fields cover the range from the "miniband regime" (low fields), where Franz-Keldysh (FK) oscillations can be observed, up to the regime of Wannier-Stark (WS) transitions (high fields). Special emphasis is devoted to the investigation of the intermediate-field regime where both effects are present. We give a thorough theoretical treatment which is the basis for results published recently. It is shown that the crystal momentum representation can correctly describe the absorption behavior over the whole field range. For intermediate fields one obtains complicated but regular structures due to the co...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
Using photocurrent spectroscopy, we have studied the absorption properties of GaAs/AlAs superlattice...
We compare experimental and theoretical electroabsorption spectra of strongly coupled GaAs/AlAs supe...
We have systematically measured the electroreflectance spectra of a GaAs (7.0 nm)/Al(0.1)Ga(0.9)As(3...
The application of an external electric field parallel to the growth axis of a superlattice quantize...
The application of an external electric field parallel to the growth axis of a superlattice quantize...
We present a comparative study of Bloch oscillations in InGaAsP/InGaAsP and GaAs/AlGaAs superlattice...
The electric field dependent absorption properties of p-i-n diodes containing GaAs/AlAs superlattice...
We have studied the optical absorption properties of a GaAs/AlAs short-period superlattice at room t...
We review the basic features of interminiband absorption in superlattices, focussing on the joint de...
We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied ele...
We have studied the optical absorption properties of a GaAs/AlAs short‐period superlattice at room t...
International audienceIn 1970, Esaki and Tsu invented the concept of semiconductor superlattices for...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
Using photocurrent spectroscopy, we have studied the absorption properties of GaAs/AlAs superlattice...
We compare experimental and theoretical electroabsorption spectra of strongly coupled GaAs/AlAs supe...
We have systematically measured the electroreflectance spectra of a GaAs (7.0 nm)/Al(0.1)Ga(0.9)As(3...
The application of an external electric field parallel to the growth axis of a superlattice quantize...
The application of an external electric field parallel to the growth axis of a superlattice quantize...
We present a comparative study of Bloch oscillations in InGaAsP/InGaAsP and GaAs/AlGaAs superlattice...
The electric field dependent absorption properties of p-i-n diodes containing GaAs/AlAs superlattice...
We have studied the optical absorption properties of a GaAs/AlAs short-period superlattice at room t...
We review the basic features of interminiband absorption in superlattices, focussing on the joint de...
We have studied the Wannier-Stark effect in GaAs/GaAlAs short-period superlattices under applied ele...
We have studied the optical absorption properties of a GaAs/AlAs short‐period superlattice at room t...
International audienceIn 1970, Esaki and Tsu invented the concept of semiconductor superlattices for...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...
The oscillator strengths of the optical transitions in a semiconductor superlattice under an electri...