Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes

Intensity modulation and chirp of 1.55-mu m multiple-quantum well laser diodes. Modeling and experimental verification

Czotscher, K.
Weisser, S.
Leven, A.
Rosenzweig, J.

January 1999

A laser model based on rate equations for the simulation of high-speed optical access networks using...

Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents

Weisser, S.
Ralston, J.D.
Eisele, K.
Sah, R.E.
Hornung, J.
Larkins, E.C.
Tasker, P.J.
Benz, W.
Rosenzweig, J.
Bronner, W.
Fleissner, J.
Bender, K.

January 1994

We have fabricated strained In0.35Ga0.65As/GaAs undoped andp-doped (2*10 hoch 19 cm-3)multiple-quant...

P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.

Ralston, J.D.
Weisser, S.
Esquivias, I.
Schönfelder, A.
Larkins, E.C.
Rosenzweig, J.
Tasker, P.J.
Maier, M.
Fleissner, J.

January 1993

We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviou...

CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions

Weisser, S.
Larkins, E.C.
Esquivias, I.
Fleissner, J.
Maier, M.
Ralston, J.D.
Romero, B.
Sah, R.E.
Schönfelder, A.
Rosenzweig, J.

January 1995

We present the first semiconductor lasers to achieve direct CW modulation bandwidths exceeding 40GHz...

Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers

Weisser, S.
Larkins, E.C.
Czotscher, K.
Benz, W.
Daleiden, J.
Esquivias, I.
Fleissner, J.
Ralston, J.D.
Romero, B.
Sah, R.E.
Schönfelder, A.
Rosenzweig, J.

January 1996

We demonstrate record direct modulation bandwidth from MBE-grown In(0.35)Ga(0.65)As-GaAs multiple-qu...

Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers

Ralston, J.D.
Weisser, S.
Eisele, K.
Sah, R.E.
Larkins, E.C.
Rosenzweig, J.
Fleissner, J.
Bender, K.

January 1994

Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 my...

Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.

Ralston, J.D.
Weisser, S.
Larkins, E.C.
Esquivias, I.
Tasker, P.J.
Fleissner, J.
Rosenzweig, J.

January 1992

We demonstrate p-type modulation-doped strained- layer Insub0.35Gasub0.65As/GaAs multiple quantum we...

Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration

Ralston, J.D.
Eisele, K.
Sah, R.E.
Larkins, E.C.
Weisser, S.
Fleissner, J.
Bender, K.
Rosenzweig, J.

January 1994

Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 my...

Modulation response of Quantum Well lasers with carrier transport effects under weak optical feedback

M. Homar
C. R. Mirasso
I. Esquivias
M. San Miguel
Palma De Mallorca

November 2007

We theoretically investigate the influence of optical feedback on the modulation response of quantum...

Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions

Czotscher, K.
Larkins, E.C.
Weisser, S.
Benz, W.
Daleiden, J.
Esquivias, I.
Fleissner, J.
Maier, M.
Ralston, J.D.
Romero, B.
Schönfelder, A.
Rosenzweig, J.

January 1996

Short-cavity In(0.35)Ga(0.65)As/GaAs multiple quantum well (MQW) lasers with undoped and p-doped act...

Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion

Bürkner, S.
Ralston, J.D.
Weisser, S.
Sah, R.E.
Fleissner, J.
Larkins, E.C.
Rosenzweig, J.

January 1995

The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of h...

High speed 1.55 µm InAs/InGaAlAs/InP quantum dot lasers

Gready, D.
Eisenstein, G.
Ivanov, V.
Gilfert, C.
Schnabel, F.
Rippien, A.
Reithmaier, J.P.
Bornholdt, C.

January 2014

We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 ...

Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Lau, K. Y.
Bar-Chaim, N.
Ury, I.
Harder, Ch.
Yariv, A.

July 1983

Experimental and theoretical studies indicate that a high-frequency laser with bandwidths up to X-ba...

High Speed Modulation Characteristics of Semiconductor Nanolasers and Coupled Ring Laser Systems

Xu, Chi

January 2021

Optical communication systems require light sources that can be modulated with high speeds. However,...

Small-Signal Modulation and Analysis of Monolithic 1.3μm InAs/GaAs Quantum Dot Lasers on Silicon

Hantschmann, C
Vasil'ev, PP
Chen, S
Liao, M
Seeds, AJ
Liu, H
Penty, RV
White, IH
,
,
,

November 2018

The first small-signal modulation experiments with monolithic single transverse mode InAs/GaAs laser...

Intensity modulation and chirp of 1.55-mu m multiple-quantum well laser diodes. Modeling and experimental verification

Czotscher, K.
Weisser, S.
Leven, A.
Rosenzweig, J.

January 1999

A laser model based on rate equations for the simulation of high-speed optical access networks using...

Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents

Weisser, S.
Ralston, J.D.
Eisele, K.
Sah, R.E.
Hornung, J.
Larkins, E.C.
Tasker, P.J.
Benz, W.
Rosenzweig, J.
Bronner, W.
Fleissner, J.
Bender, K.

January 1994

We have fabricated strained In0.35Ga0.65As/GaAs undoped andp-doped (2*10 hoch 19 cm-3)multiple-quant...

P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.

Ralston, J.D.
Weisser, S.
Esquivias, I.
Schönfelder, A.
Larkins, E.C.
Rosenzweig, J.
Tasker, P.J.
Maier, M.
Fleissner, J.

January 1993

We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviou...

CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions

Weisser, S.
Larkins, E.C.
Esquivias, I.
Fleissner, J.
Maier, M.
Ralston, J.D.
Romero, B.
Sah, R.E.
Schönfelder, A.
Rosenzweig, J.

January 1995

We present the first semiconductor lasers to achieve direct CW modulation bandwidths exceeding 40GHz...

Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In(0.35)Ga(0.65)As-GaAs multiple-quantum-well lasers

Weisser, S.
Larkins, E.C.
Czotscher, K.
Benz, W.
Daleiden, J.
Esquivias, I.
Fleissner, J.
Ralston, J.D.
Romero, B.
Sah, R.E.
Schönfelder, A.
Rosenzweig, J.

January 1996

We demonstrate record direct modulation bandwidth from MBE-grown In(0.35)Ga(0.65)As-GaAs multiple-qu...

Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQWRidge-waveguide lasers

Ralston, J.D.
Weisser, S.
Eisele, K.
Sah, R.E.
Larkins, E.C.
Rosenzweig, J.
Fleissner, J.
Bender, K.

January 1994

Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 my...

Modulation bandwidths up to 30 GHz under CW bias in strained In0.35Ga0.65As/GaAs MQW lasers with p-doping.

Ralston, J.D.
Weisser, S.
Larkins, E.C.
Esquivias, I.
Tasker, P.J.
Fleissner, J.
Rosenzweig, J.

January 1992

We demonstrate p-type modulation-doped strained- layer Insub0.35Gasub0.65As/GaAs multiple quantum we...

Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguides lasers suitable for monolithic integration

Ralston, J.D.
Eisele, K.
Sah, R.E.
Larkins, E.C.
Weisser, S.
Fleissner, J.
Bender, K.
Rosenzweig, J.

January 1994

Modulation bandwidths of 24 GHz (Ibias=25 mA) and 33 GHz (Ibias=65 mA) are demonstrated for 3*100 my...

Modulation response of Quantum Well lasers with carrier transport effects under weak optical feedback

M. Homar
C. R. Mirasso
I. Esquivias
M. San Miguel
Palma De Mallorca

November 2007

We theoretically investigate the influence of optical feedback on the modulation response of quantum...

Ultra-high-speed InGaAs/GaAs MQW lasers with C-doped active regions

Czotscher, K.
Larkins, E.C.
Weisser, S.
Benz, W.
Daleiden, J.
Esquivias, I.
Fleissner, J.
Maier, M.
Ralston, J.D.
Romero, B.
Schönfelder, A.
Rosenzweig, J.

January 1996

Short-cavity In(0.35)Ga(0.65)As/GaAs multiple quantum well (MQW) lasers with undoped and p-doped act...

Wavelength tunig of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion

Bürkner, S.
Ralston, J.D.
Weisser, S.
Sah, R.E.
Fleissner, J.
Larkins, E.C.
Rosenzweig, J.

January 1995

The impurity-free interdiffusion technique has been utilized to modify the operating wavelength of h...

High speed 1.55 µm InAs/InGaAlAs/InP quantum dot lasers

Gready, D.
Eisenstein, G.
Ivanov, V.
Gilfert, C.
Schnabel, F.
Rippien, A.
Reithmaier, J.P.
Bornholdt, C.

January 2014

We report static and dynamic characteristics of InAs/InP quantum dot (QD) lasers emitting near 1.55 ...

Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Lau, K. Y.
Bar-Chaim, N.
Ury, I.
Harder, Ch.
Yariv, A.

July 1983

Experimental and theoretical studies indicate that a high-frequency laser with bandwidths up to X-ba...

High Speed Modulation Characteristics of Semiconductor Nanolasers and Coupled Ring Laser Systems

Xu, Chi

January 2021

Optical communication systems require light sources that can be modulated with high speeds. However,...

Small-Signal Modulation and Analysis of Monolithic 1.3μm InAs/GaAs Quantum Dot Lasers on Silicon

Hantschmann, C
Vasil'ev, PP
Chen, S
Liao, M
Seeds, AJ
Liu, H
Penty, RV
White, IH
,
,
,

November 2018

The first small-signal modulation experiments with monolithic single transverse mode InAs/GaAs laser...

Intensity modulation and chirp of 1.55-mu m multiple-quantum well laser diodes. Modeling and experimental verification

Czotscher, K.
Weisser, S.
Leven, A.
Rosenzweig, J.

January 1999

A laser model based on rate equations for the simulation of high-speed optical access networks using...

Dry-etched short-cavity ridge waveguide MQW lasers suitable for monolithic integration with direct modulation bandwidth up to 33 GHz at low drive currents

Weisser, S.
Ralston, J.D.
Eisele, K.
Sah, R.E.
Hornung, J.
Larkins, E.C.
Tasker, P.J.
Benz, W.
Rosenzweig, J.
Bronner, W.
Fleissner, J.
Bender, K.

January 1994

We have fabricated strained In0.35Ga0.65As/GaAs undoped andp-doped (2*10 hoch 19 cm-3)multiple-quant...

P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.

Ralston, J.D.
Weisser, S.
Esquivias, I.
Schönfelder, A.
Larkins, E.C.
Rosenzweig, J.
Tasker, P.J.
Maier, M.
Fleissner, J.

January 1993

We investigate p-dopant incorporation and the influence of p-doping on the gain and damping behaviou...

Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes

Abstract

Extracted data

Record small-signal adirect modulation band widths upto 40 GHz and low chirp characteristics (alpha = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes

Abstract

Extracted data

Related items

Related items