Temperature controlling with reflection supported interferometry (RSPI) at rapid thermal chemical vapor deposition-facilities (RTCVD)

RTCVD-facilities aspire to be one of the most used production tools in high yield semiconductor manufacturing in the next years. To obtain best quality electronic devices with a great flexibility it is necessary to observe and control many process parameters. Temperature and film thickness are two of these quantities. Since RSPI is an established real time tool for in-situ temperature and film thickness evaluation at many wafer production facilities, the task was to extend its applicability to RTCVD-facilities. To overcome optical irradiation of RTP(rapid thermal processing)-sources infrared RSPI adaptions were made in the wavelength region of 1.5 mu m . The measurement equipment according to RTCVD-facilities is compared with the standard RSPI-setup. In this paper data of temperature and film growth measurements are presented in dependence of various material compositions and observation wavelength. It is shown that the lowest measurable temperature with a minimal resolution 1 deg C is about 380 deg C up to 450 deg C depending on the wafer material and observation wavelength. Beyond temperature and film thickness evaluation we succeeded in the first temperature controlling during film with RSPI-methods at RTCVD-facilities. The paper also demonstrates growth rates of films are held much more constant with temperature control in comparison to deposition procedures without temperature control. Material compositions of the discussed data are Poly-Si on Si; Si on Ge; SiN on Si and so on